In this study, a novel rapid prototyping technology was used to fabricate scaphoid and lunate bone prostheses, two carpal bones that are prone to avascular necrosis. Carpal prostheses were fabricated with an Envisiontec Perfactory SXGA stereolithography system using Envisiontec eShell 200 photocurable polymer. Fabrication was guided using 3-D models, which were generated using Mimics software (Materialise NV, Leuven, Belgium) from patient computer tomography data. The prostheses were fabricated in a layer-by-layer manner; approximately 50-microm thick layers were observed in the prostheses. Hardness and Young's modulus values of polymerized eShell 200 material were 93.8 +/- 7.25 MPa and 3050 +/- 90 MPa, respectively. The minimum compressive force required for fracture was 1360 N for the scaphoid prosthesis and 1248 N for the lunate prosthesis. Polymerized Envisiontec eShell material exhibited high human neonatal epidermal keratinocyte cell viability rate in an MTT assay. The results of this study indicate that small bone prostheses fabricated by stereolithography using eShell 200 polymer may have suitable geometry, mechanical properties, and cytocompatibility properties for in vivo use.

Resistivityprocess relationships in TiSi2 formed from Ti-Si reaction couples

The rapid introduction of copper metallization for semiconductor devices has prompted increased research into focused-ion-beam micromachining of copper. Studies with the aim of increasing the material removal rate of Cu by focused-ion-beam micromachining have been complicated by variable micromachining behavior apparently resulting from differing Cu film morphologies produced by the various Cu deposition procedures. This work examined the micromachining behavior of thin copper films produced by physical-vapor deposition (PVD) and electroplating, as well as single-crystal copper samples. PVD copper films were found to be preferentially textured along 〈111〉, with a columnar grain structure. Channeling effects within this type of grain structure provide a geometric enhancement of the material removal rate of 30% when the sample normal is tilted 12° from the incident ion beam, regardless of sample rotation. Single-crystal (111) copper was found to exhibit similar material removal rate enhancement (averaged over 360° rotation) when tilted 12°, verifying that the etching enhancement observed in the PVD films is directly related to their 〈111〉 texture. Compared to the PVD film, electroplated (EP) copper thin films contained a significantly more random grain orientation. Consequently, the EP films did not exhibit any appreciable variation in material removal rate beyond the expected cosine dependence when tilted with respect to the incident Ga+ beam normal. Micromachining of the electroplated films, which have larger randomly oriented grains, results in grain decoration due to preferential etching producing severe micromachining-induced topography.

Ohmic contacts to n-GaAs (Si doped at 2×1018 cm−3) with contact resistances of 0.7–1.5×10−6 Ω cm2 have been formed with deposited layers of In and Pd. The layers were sequentially evaporated and then annealed at 500 °C for 20 s to form In3Pd and a top layer of In. In addition a thin (≊200 Å) reacted layer was formed at the GaAs interface. Uniform interface morphology was observed with no evidence of localized reaction.

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