Auger electron spectroscopy has been used in conjunction with argon ion sputtering in a study of the chemical structure of the interface region between thermally grown SiO2 and the Si substrate. The distorting effects of the electron and ion beams are dealt with in detail, and we show how the beam parameters can be chosen to minimize instrumental artifacts in the Auger spectra and the chemical depth profiles of the SiO2-Si interface. We discuss the SiO2-Si interface in terms of a morphology model which includes a natural interface roughness and inclusions of silicon in the oxide close to the interface. The width of the interface of a 1000-Å oxide grown at 1200 °C in dry O2 on Si (100) is approximately 35 Å.

Clinical genetic testing (CGT) of children with autism spectrum disorder (ASD) may have positive and negative effects. Knowledge about parents’ attitudes is needed to ensure good involvement of caregivers, which is crucial for accurate diagnosis and effective clinical management. This study aimed to assess parents’ attitudes toward CGT for ASD. Parent members of the Norwegian Autism Society were given a previously untested questionnaire and 1455 answered. Linear regression analyses were conducted to evaluate contribution of parent and child characteristics to attitude statements. Provided it could contribute to a casual explanation of their child’s ASD, 76% would undergo CGT. If it would improve the possibilities for early interventions, 74% were positive to CGT. Between 49–67% agreed that CGT could have a negative impact on health insurance, increase their concern for the child’s future and cause family conflicts. Parents against CGT (9%) were less optimistic regarding positive effects, but not more concerned with negative impacts. The severity of the children’s ASD diagnosis had a weak positive association with parent’s positive attitudes to CGT (p-values range from <0.001 to 0.975). Parents prefer that CGT is offered to those having a child with ASD (65%), when the child’s development deviates from normal (48%), or before pregnancy (36%). A majority of the parents of children with ASD are positive to CGT due to possibilities for an etiological explanation.

The Si oxidation rate at high temperatures is increased by heavy P doping. Sputter ion-Auger techniques have been used to investigate the oxide thickness and P concentration after 900 °C oxidation with an initial P surface concentration of between 2×1018 and 3.2×1020/cm3. Phosphorus was found to pile up in the Si-SiO2 interface region. The maximum P concentration near the interface was found to depend on doping and was (at certain P concentrations) an order of magnitude larger than that predicted by redistribution theory. A vacancy–P-complex model is presented to explain the observed behavior. A correlation between the selective pile-up of P at the interface and the current gain of planar bipolar transistors is reported.

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Parents of children with ASD have, in general, a very positive attitude toward genetic research. Data confidentiality is important, and they express a need for information on the purpose and progress of the research.