We measured the radiation tolerance of commercially available diamonds grown by the Chemical Vapor Deposition process by measuring the charge created by a 120 GeV hadron beam in a 50 μm pitch strip detector fabricated on each diamond sample before and after irradiation. We irradiated one group of samples with 70 MeV protons, a second group of samples with fast reactor neutrons (defined as energy greater than 0.1 MeV), and a third group of samples with 200 MeV pions, in steps, to (8.8±0.9) × 1015 protons/cm2, (1.43±0.14) × 1016 neutrons/cm2, and (6.5±1.4) × 1014 pions/cm2, respectively. By observing the charge induced due to the separation of electron–hole pairs created by the passage of the hadron beam through each sample, on an event-by-event basis, as a function of irradiation fluence, we conclude all datasets can be described by a first-order damage equation and independently calculate the damage constant for 70 MeV protons, fast reactor neutrons, and 200 MeV pions. We find the damage constant for diamond irradiated with 70 MeV protons to be 1.62±0.07(stat)±0.16(syst)× 10−18 cm2/(p μm), the damage constant for diamond irradiated with fast reactor neutrons to be 2.65±0.13(stat)±0.18(syst)× 10−18 cm2/(n μm), and the damage constant for diamond irradiated with 200 MeV pions to be 2.0±0.2(stat)±0.5(syst)× 10−18 cm2/(π μm). The damage constants from this measurement were analyzed together with our previously published 24 GeV proton irradiation and 800 MeV proton irradiation damage constant data to derive the first comprehensive set of relative damage constants for Chemical Vapor Deposition diamond. We find 70 MeV protons are 2.60 ± 0.29 times more damaging than 24 GeV protons, fast reactor neutrons are 4.3 ± 0.4 times more damaging than 24 GeV protons, and 200 MeV pions are 3.2 ± 0.8 more damaging than 24 GeV protons. We also observe the measured data can be described by a universal damage curve for all proton, neutron, and pion irradiations we performed of Chemical Vapor Deposition diamond. Finally, we confirm the spatial uniformity of the collected charge increases with fluence for polycrystalline Chemical Vapor Deposition diamond, and this effect can also be described by a universal curve.

An instrument has been developed for precision controlled exposures of electronic devices and material samples in particle beams. The instrument provides simultaneously a real time record of the profile of the beam and the fluence received. The system is capable of treating devices with dimensional scales ranging from millimeters to extended objects of cross sections measured in tens of square centimeters. The instrument has been demonstrated to operate effectively in integrated fluences ranging up to a few times 10 16 1-MeV-neutron-equivalent/cm 2 (neq). The positioner portion of the system comprises a set of remotely controllable sample holders incorporating cooling and interfaces for sample power and readout, all constructed from low activation technologies. The monitoring component of the system samples the current or voltage of radiation tolerant silicon diodes placed directly in the path of the beam.

Diamond is used as detector material in high energy physics experiments due to its inherent radiation tolerance. The RD42 collaboration has measured the radiation tolerance of chemical vapour deposition (CVD) diamond against proton, pion, and neutron irradiation. Results of this study are summarized in this article. The radiation tolerance of diamond detectors can be further enhanced by using a 3D electrode geometry. We present preliminary results of a poly-crystalline CVD (pCVD) diamond detector with a 3D electrode geometry after irradiation and compare to planar devices of roughly the same thickness.

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