Molecular-beam-epitaxy growth of high structural and optical-quality InGaAsN∕GaAs quantum wells (QW) has been investigated. The material quality can be improved significantly by using low-temperature growth to suppress the phase separation. High-performance ridge-waveguide InGaAsN∕GaAs single QW lasers emitting at 1.3μm have been demonstrated. Infinite-cavity-length threshold-current density of 400A∕cm2, internal quantum efficiency of 96%, and a slope efficiency of 0.67W∕A for a cavity length L=1mm were obtained. A TO46 packaging laser shows single lateral-mode kink-free output power of more than 200mW with a maximum total wallplug efficiency of 29% at room temperature under continuous wave (cw) operation. Moreover, 1.3μm InGaAsN∕GaAs QW vertical-cavity surface-emitting lasers with a threshold current density lower than 2KA∕cm2 at room temperature have been achieved. We obtained multimode cw output power and slope efficiency in excess of 1mW and 0.15W∕A, respectively.