Molecular-beam-epitaxy growth of high-quality InGaAsN∕GaAs quantum well lasers emitting at 1.3μm

Abstract

Molecular-beam-epitaxy growth of high structural and optical-quality InGaAsN∕GaAs quantum wells (QW) has been investigated. The material quality can be improved significantly by using low-temperature growth to suppress the phase separation. High-performance ridge-waveguide InGaAsN∕GaAs single QW lasers emitting at 1.3μm have been demonstrated. Infinite-cavity-length threshold-current density of 400A∕cm2, internal quantum efficiency of 96%, and a slope efficiency of 0.67W∕A for a cavity length L=1mm were obtained. A TO46 packaging laser shows single lateral-mode kink-free output power of more than 200mW with a maximum total wallplug efficiency of 29% at room temperature under continuous wave (cw) operation. Moreover, 1.3μm InGaAsN∕GaAs QW vertical-cavity surface-emitting lasers with a threshold current density lower than 2KA∕cm2 at room temperature have been achieved. We obtained multimode cw output power and slope efficiency in excess of 1mW and 0.15W∕A, respectively.

Strain relaxation in InAs self-assembled quantum dots induced by a high N incorporation

“…Assuming the added N is completely incorporated into the InAs sublattice, we estimated the N content to be 17% from the growth rates of the InAs ͑0.26 Å / s͒ and GaAs ͑2.78 Å / s͒ layers assuming the N incorporation efficiency is similar to that in GaAsN layer. 24 Such a high N composition is due to the very low growth rate of the InAs QD layer for gaining a high density of the QDs. If the same N source is incorporated into a GaAs layer at a growth rate of 2.78 Å / s, the resulted N composition would be about 2%.…”

Electron emissions in InAs quantum dots containing a nitrogen incorporation induced defect state: the influence of thermal annealing

“…N atoms were incorporated into the InAs layer using an EPI-Unibulb radio-frequency (RF) plasma source to supply active nitrogen species from ultra-pure N 2 gas. Assuming that the incorporated N atoms occupy the sublattice sites, the QD layer of the studied sample would have a N content of 17%, estimated simply from the growth rates of the InAs (0.26 Å s −1 ) and GaAs (2.78 Å s −1 ) layers assuming that the N incorporation efficiency is similar to that in the GaAsN layer [13]. Schottky diodes were realized by evaporating Al with a dot diameter of 1500 μm.…”

Structural and electrical characteristics of InGaAsN layers grown by LPE

“…The growth of dilute nitride alloys is difficult because of the wide immiscibility range, a large difference in the lattice constant value and very small atom radius of N atoms. Low threshold current density CW operation InGaAsN lasers at wavelengths of about 1.3 mm have been realized on the base of InGaAsN quantum-well (QW) structures [1,2]. However, the growth of thick epitaxial layers creates many problems which absent in the QW structures.…”