We report on fabrication and electrical characteristics of ZnO nanorod Schottky diode arrays. High quality ZnO nanorods were grown for the fabrication of the Schottky diodes using noncatalytic metalorganic vapor phase epitaxy and Au was evaporated on the tips of the vertically well-aligned ZnO nanorods. I–V characteristics of both bare ZnO and Au/ZnO heterostructure nanorod arrays were measured using current-sensing atomic force microscopy. Although both nanorods exhibited nonlinear and asymmetric I–V characteristic curves, Au/ZnO heterostructure nanorods demonstrated much improved electrical characteristics: the reverse-bias breakdown voltage was improved from −3 to −8 V by capping a Au layer on the nanorod tips. The origin of the enhanced electrical characteristics for the heterostructure nanorods is suggested.

Electronic structures of a charge-density wave (CDW) system CeTe 2−x Sb x (x = 0, 0.05) have been investigated by employing angle-resolved photoemission spectroscopy (ARPES) and the first-principles electronic and phonon band-structure methods. The observed Fermi surface (FS) agrees very well with the calculated FS for the undistorted CeTe 2 both in shapes and sizes. The metallic states crossing the Fermi level (E F ) are observed in ARPES even in the CDW state. The carriers near E F have mainly the Te(1) 5p character, with a negligible contribution from Ce 4f states. The supercell (shadow) bands and the corresponding very weak FSs are found to arise from band folding due to the interaction of Te(1) layers with Ce-Te(2) layers. We found that the CDW modulation vector is along -X (Q CDW ≈ X), which is not coincident with the most prominent FS nesting vector.