Articles you may be interested inModel relating process variables to film electrical properties for reactively sputtered tantalum oxide thin films

Articles you may be interested inStructural and dielectric studies of Co doped MgTiO3 thin films fabricated by RF magnetron sputtering AIP Advances 4, 067142 (2014); 10.1063/1.4886379 Thin film high dielectric constant metal oxides prepared by reactive sputtering J. Vac. Sci. Technol. B 30, 062202 (2012); 10.1116/1.4757132 Study of metal oxide-semiconductor capacitors with rf magnetron sputtering Ti O x and Ti O x N y gate dielectric layer J.Properties of reactively radio frequency-magnetron sputtered ( Zr , Sn ) TiO 4 dielectric films Dramatic dependence of dielectric properties on the pulsing frequency was found for titanium oxide films deposited using the pulsed dc magnetron sputtering technique at room temperature. The frequency range studied was between 50 and 250 kHz by varying the oxygen pressure. A minimum leakage current density of 0.22 A/cm 2 at 0.5 MV/cm electric-field strength for a film with dielectric constant of 26 was achieved for relative oxygen pressure Pϭ60% ͓ P(%)ϭ P O 2 /(P O 2 ϩ P Ar ͔ and frequency f ϭ200 kHz.