Electrical characteristics of thin Ta2O5 films deposited by reactive pulsed direct-current magnetron sputtering

Abstract

Articles you may be interested inModel relating process variables to film electrical properties for reactively sputtered tantalum oxide thin films

Electrical properties of low temperature deposited amorphous barium titanate thin films as dielectrics for integrated capacitors

“…From a practical point of view, the material possesses good dielectric properties at high frequencies (100 kHz). The dielectric constant (18.5) and the dissipation factor (4 Â 10 À 3 ) are comparable to more popular oxides such as Ta 2 O 5 [13]. The temperature coefficient of capacitance (TCC) is about 240 ppm/-C in the À 50 -C to + 150 -C range (extracted from Fig.…”

Electroluminescence from Light-Emitting Diodes by Using Water-Dispersed ZnSe Nanocrystals and Polymer

“…1 Tantalum pentoxide (Ta 2 O 5 , an electrical insulator with dielectric constant > 26, is one of the best candidates to be used as a gate barrier instead of SiO 2 in field effect transistors and in DRAM capacitors. 2 3 Several techniques such as electron beam gun evaporation, 4 and reactive pulsed direct-current magnetron sputtering 5 have been used to fabricate highly insulating tantalum pentoxide capacitor films. Tip-induced Scanning Probe Lithography (SPL) technique has been used to create nanostructures below 100 nm 6 on semiconductors [7][8][9] and metals surfaces such as chromium, 10 titanium, 11-12 niobium 13 and on tantalum films in contact mode.…”

Frequency-dependent pulsed direct current magnetron sputtering of titanium oxide films

“…18 Pulsed reactive dc magnetron sputtering has been developed to improve the quality of oxide films by avoiding arcing. [18][19][20][21] For a pulsed reactive dc magnetron sputtering, the polarity of the power supplied to the target oscillates between negative and positive potential. During the positive period, the insulating layer on the target surface is discharged and arcing is prevented.…”

“…From the defect density found in the dielectric oxide film and the deposition rate, it is estimated that the typical operating frequencies for pulsed dc magnetron sputtering of oxides should be in the 10-250 kHz range. [18][19][20][21] Belkind et al 18 suggested that arcing could be avoided when pulsing frequency is higher than a critical frequency that depends on the cathode current and reverse time. So far, very few attempts have been made to study the pulsing effect on the electrical properties of oxide films.…”

“…For example, oxygen partial pressure is an important factor for the electrical properties of tantalum oxide films deposited by reactive dc sputtering. 20 In this work, the physical and electrical properties of the titanium oxide films were studied in terms of dielectric constant, leakage current density, and breakdown field strength using different pulsing frequencies and oxygen partial pressure in the sputtering atmosphere. …”