Effect of electromigration on mechanical shear behavior of flip chip solder joints consisting of 97Pb3Sn and 37Pb63Sn composite solder joints was studied. The under bump metallurgy (UBM) on the chip side was TiW/Cu/electroplated Cu, and the bond pad on the board side was electroless Ni/Au. It was found that the mode of shear failure has changed after electromigration and the mode depends on the direction of electron flow during electromigration. The shear induced fracture occurs in the bulkof 97Pb3Sn solder without current stressing, however, after 10 h current stressing at 2.55 × 104 A/cm2 at 140 °C, it occurs alternately at the cathode interfaces between solder and intermetallic compounds (IMCs). In the downward electron flow, from the chip to substrate, the failure site was at the Cu–Sn IMC/solder interface near the Si chip. However, in the upward electron flow, from the substrate to chip, failure occurred at the Ni–Sn IMC/solder interface near the substrate. The failure mode has a strong correlation to microstructural change in the solder joint. During the electromigration, while Pb atoms moved to the anode side in the same direction as with the electron flow, Sn atoms diffused to the cathode side, opposite the electron flow. In addition, electromigration dissolves and drives Cu or Ni atoms from UBM or bond pad at the cathode side into the solder. These reactions resulted in the large growth of Sn-based IMC at the cathode sides. Therefore, mechanical shear failure occurs predominantly at the cathode interface.

The electromigration-induced failure in flip-chip eutectic SnPb solder joints with a 10-μm-thick Cu under-bump metallization (UBM) was studied without the effect of current crowding in the solder region. The current crowding occurred inside the UBM instead of in the solder joint at the current density of 3.0 × 104 A/cm2 because of the spreading of current in the very thick Cu UBM. In these joints, the failure occurred through a two-stage consumption of the thick Cu UBM in the joint where electrons flowed from the chip to the substrate. In the first stage, the Cu UBM dissolved layer by layer rather uniformly across the entire Cu UBM–solder interface. In the second stage, after half of the Cu UBM was dissolved, an asymmetrical dissolution of Cu UBM took place at the corner where electrons entered from the Al interconnect to the Cu UBM. Experimental observation of dissolution steps of the 10-μm-thick Cu UBM is presented. The transition from the first stage to the second stage has been found to depend on the location of current crowding in the flip-chip joints as the UBM thickness changes during the electromigration test. The current distribution in the flip-chip solder joints as a function of UBM thickness was simulated by three-dimensional finite element analysis. The dissolution rate of Cu UBM in the second stage was faster than that in the first stage. The mechanism of electromigration-induced failure in the flip-chip solder joints with a 10-μm-thick Cu UBM is discussed.

We demonstrate direct flip-chip assembly of photonic dies with solder-induced selfalignment to sub-micron accuracy. We find a peak chip-to-chip transmission of-1.1 dB with 0.2 dB penalty over the 120 nm spectrum measured.

Many thermomechanical reliability studies on microelectronics and microsystems have relied upon computational analysis, since experimental work is rather difficult and very time-consuming. For computational analysis, it is essential to use as input accurate material properties; if not, the results of a reliability analysis may be very inaccurate. However, it is still quite difficult to arrive at unified material properties for modeling microelectronic assemblies because of the absence of standards for micro-material characterization, the difference between bulk and in-situ material properties, and so forth. The goal of this study was to determine the uniaxial stress-strain curve of a solder in a flip-chip assembly, using experimental measurements and finite-element analysis (FEA) of the solder's thermal deformation characteristics with increasing temperature. The thermal deformation of flip-chip solder joints was measured by electronic speckle pattern interferometry (ESPI). For the scale of evaluation required, the measurement magnification was modified to allow its application to micromaterials by using a long-working-distance microscope, iris and zoom lens. Local deformation of solder balls could be measured at submicrometer scale, and stress-strain curves could be determined using the measured thermal deformation as input data for finite-element analysis. The procedure was applied to an Sn-36Pb-2Ag flip-chip solder joint.