A modified version of the atomic force microscope is introduced that enables a precise measurement of the force between a tip and a sample over a tip-sample distance range of 30–150 Å. As an application, the force signal is used to maintain the tip-sample spacing constant, so that profiling can be achieved with a spatial resolution of 50 Å. A second scheme allows the simultaneous measurement of force and surface profile; this scheme has been used to obtain material-dependent information from surfaces of electronic materials.

We describe a new method for imaging magnetic fields with 1000 Å resolution. The technique is based on using a force microscope to measure the magnetic force between a magnetized tip and the scanned surface. The method shows promise for the high-resolution mapping of both static and dynamic magnetic fields.

We measure the temperature distribution in a biased single-layer graphene transistor using Raman scattering microscopy of the 2D-phonon band. Peak operating temperatures of 1050 K are reached in the middle of the graphene sheet at 210 KW cm -2 of dissipated electric power. The metallic contacts act as heat sinks, but not in a dominant fashion. To explain the observed temperature profile and heating rate, we have to include heat-flow from the graphene to the gate oxide underneath, especially at elevated temperatures, where the graphene thermal conductivity is lowered due to umklapp scattering. Velocity saturation due to phonons with about 50 meV energy is inferred from the measured charge density via shifts in the Raman G-phonon band, suggesting that remote scattering (through field coupling) by substrate polar surface phonons increases the energy transfer to the substrate and at the same time limits the high-bias electronic conduction of graphene.

We demonstrate the usefulness and high sensitivity of the atomic force microscope (AFM) for imaging surface dielectric properties and for potentiometry through the detection of electrostatic forces. Electric forces as small as 10−10 N have been measured, corresponding to a capacitance of 10−19 farad. The sensitivity of our AFM should ultimately allow us to detect capacitances as low as 8×10−22 F. The method enables us to detect the presence of dielectric material over Si, and to measure the voltage in a p-n junction with submicron spatial resolution.

Interferometric near-field optical microscopy achieving a resolution of 10 angstroms is demonstrated. The scattered electric field variation caused by a vibrating probe tip in close proximity to a sample surface is measured by encoding it as a modulation in the optical phase of one arm of an interferometer. Unlike in regular near-field optical microscopes, where the contrast results from a weak source (or aperture) dipole interacting with the polarizability of the sample, the present form of imaging relies on a fundamentally different contrast mechanism: sensing the dipole-dipole coupling of two externally driven dipoles (the tip and sample dipoles) as their spacing is modulated.