Metal-silicon cluster cations of the form MSi(n)+ (M = Cu, Ag, Cr) are produced in a molecular beam with pulsed laser vaporization. These species are mass-selected in a reflectron time-of-flight spectrometer and studied with laser photodissociation at 532 and 355 nm. For the noble metals copper and silver, photodissociation of the n = 7 and 10 clusters proceeds primarily by the loss of metal atoms, indicating that the metal is not located within the interior of silicon cages, and that metal-silicon bonding is weaker than silicon-silicon bonding. Chromium-silicon clusters for n = 7 also lose primarily the metal atom, but at n = 15 and 16 these dissociate via the loss of silicon, producing smaller metal-silicon species. This behavior is consistent with stronger metal-silicon bonding and encapsulated metal structures, as suggested previously by theory. MSi6(+) cations are produced efficiently in all of these photodissociation processes, indicating that these species have enhanced stability compared to other small clusters. Improved values are obtained for the ionization potentials of Si7 and Si10.
Ion-molecule complexes of the form Si(+)(C6H6)n and Si(+)(C6H6)(n)Ar are produced by laser vaporization in a pulsed nozzle cluster source. These clusters are mass-selected and studied with ultraviolet (355 nm) photodissociation and resonance-enhanced infrared photodissociation spectroscopy in the C-H stretch region of benzene. In the UV, Si(+)(C6H6)n clusters (n = 1-5) fragment to produce the Si(+)(C6H6)n mono-ligand species, suggesting that this ion has enhanced relative stability. IR photodissociation of Si(+)(C6H6)n complexes occurs by the elimination of benzene, while Si(+)(C6H6)(n)Ar complexes lose Ar. Resonances reveal C-H vibrational bands in the 2900-3300 cm(-1) region characteristic of the benzene ligand with shifts caused by the silicon cation bonding. The IR spectra confirm that the major component of the Si(+)(C6H6)n ions studied have the pi-complex structure rather than the isomeric insertion products suggested previously.
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