This paper focuses on the frequency coded chipless Radio Frequency Identification (RFID) wherein the tag’s information bits are physically encoded by the resonators’ notch position which has an effect on the frequency spectrum of the backscattered or retransmitted signal of the tag. In this regard, the notch analytical model is developed to consider the notch position and quality factor. Besides, the radar cross section (RCS) mathematical representation of the tag is introduced to consider the incident wave’s polarization and orientation angles. Hence, the influences of the incident wave’s orientation and polarization mismatches on the detection performance are quantified. After that, the tag measurement errors and limitations are comprehensively explained. Therefore, approaches to measureing RCS- and retransmission-based tags are introduced. Furthermore, the maximum reading range is theoretically calculated and practically verified considering the Federal Communications Commission (FCC) Ultra Wideband (UWB) regulations. In all simulations and experiments conducted, a mono-static configuration is considered, in which one antenna is utilized for transmission and reception.

No abstract

This conference paper was presented in the 8th International Conference on Electrical and Computer Engineering, ICECE 2014; Pan Pacific Sonargaon DhakaDhaka; Bangladesh; 20 December 2014 through 22 December 2014 [© 2014 Institute of Electrical and Electronics Engineers Inc.] The conference paper's definite version is available at: http://10.1109/ICECE.2014.7026900Load flow solution is an inevitable tool for power system planning and operation. Among various methods of load flow solution techniques Newton Raphson (N-R) and its derivatives are the most popular and widely used ones. In Newton Raphson method one of the generator buses is treated as slack bus which is kept out of calculation during iterations. This is because of the fact that the slack bus is to carry entire loss of the system and total loss cannot be calculated before the end of iterations. The exclusion of slack bus from the load flow iteration restricts many analyses to make. Consideration of distributed slack bus, load flow for Microgrids, study on minimization of system losses etc. cannot be performed when the slack bus is excluded from the iterations. This paper reports the development of a method of including slack bus into the Jacobians for N-R load flow study. The method involves formulating the loss equation and then devising the formula for the terms to be included with the elements of the Jacobian matrix. The modified N-R method is applied to all of the buses and the losses are calculated in each iteration and included with the slack bus. The results obtained using the modified method are compared with those using conventional method. The agreement of the results confirms the accuracy of the developmentsPublishe

Articles you may be interested inEffect of indium surfactant on stress relaxation by V-defect formation in GaN epilayers grown by metalorganic chemical vapor deposition J. Appl. Phys. 108, 093511 (2010); 10.1063/1.3487955 Erratum: "Elimination of nonuniformities in thick GaN films using metalorganic chemical vapor deposited GaN templates" [J. Elimination of nonuniformities in thick GaN films using metalorganic chemical vapor deposited GaN templates J. Appl. Phys. 90, 6011 (2001); 10.1063/1.1415363 Effect of buffer layers and stacking faults on the reduction of threading dislocation density in GaN overlayers grown by metalorganic chemical vapor depositionThe effect of dislocations on the structural and electro-optic characteristics of n-GaN has been studied. X-ray diffraction, Hall measurement, photoluminescence spectroscopy, Raman spectroscopy, and transmission electron microscopy ͑TEM͒ have been performed to understand the interdependence of strain, dislocation, and doping concentration. The most remarkable observation of the study is the blueshift observed at a doping level N D ϳ10 18 cm Ϫ3 as a result of the relaxation of strain. The TEM results reveal a higher dislocation defect density at lower doping levels (ϳ10 17 cm Ϫ3 ) than at moderate doping levels. Blueshift is found to result from the redistribution of the dislocation density due to the reduction in strain at a certain optimum doping level͑s͒. This distribution of the dislocation is such that there are virtually no dislocations at some locations, as evident from the sample MD27 with doping у10 18 cm Ϫ3 .

No abstract