Thermal GeO2 oxides up to 136 nm thickness were produced by annealing Ge wafers in pure oxygen at 550 °C and 270 kPa pressure for up to 10 h. The oxidation kinetics followed the Deal–Grove law. Using multisample spectroscopic ellipsometry for a series of five thermal oxides with different thicknesses, the complex dielectric functions of Ge and GeO2 were determined from 0.5 to 6.6 eV, for thin-film metrology applications in Ge-based microelectronics and photonics. The dispersion of the GeO2 layer was modeled with a simple Tauc-Lorentz oscillator model, but a more complicated dispersion with eight parametric oscillators was required for Ge. A reasonable fit to the ellipsometric angles could be obtained by assuming that all thermal oxides can be described by the same dielectric function, regardless of thickness, but a slight improvement was achieved by allowing for a lower density oxide near the surface of the thickest films. The authors compare their results with literature data for Ge and bulk and thin-film GeO2.

Magnetization and transport measurements on the centrosymetric square net magnet EuGa2Al2 reveal a new magnetic A phase in finite magnetic field that shows the topological Hall effect. Neutron diffraction reveals multiple incommensurate magnetic states in zero field. In applied field, the new magnetic A phase is bounded by two of these incommensurate magnetic phases (helical and cycloidal) with different moment orientations. Together, these results point to EuGa2Al2 as a material with non-coplanar or topological spin texture in field. Moreover, X-ray diffraction reveals an out-of-plane (OOP) charge density wave (CDW) below ∼ 51 K while the magnetic propagation vector lies in-plane below TN = 19.5 K. We discuss a new route to realizing in-plane non-collinear spin textures through an OOP CDW.

The delocalization of x-ray signals limits the spatial resolution in atomic-scale elemental mapping by scanning transmission electron microscopy (STEM) using energy-dispersive x-ray spectroscopy (EDS). In this study, using a SrTiO [001] single crystal, we show that the x-ray localization to atomic columns is strongly dependent on crystal thickness, and a thin crystal is critical for improving the spatial resolution in atomic-scale EDS mapping. A single-frame scanning technique is used in this study instead of the multiple-frame technique to avoid peak broadening due to tracking error. The strong thickness dependence is realized by measuring the full width at half maxima (FWHM) as well as the peak-to-valley (P/V) ratio of the EDS profiles for Ti K and Sr K + L, obtained at several crystal thicknesses. A FWHM of about 0.16 nm and a P/V ratio of greater than 7.0 are obtained for Ti K for a crystal thickness of less than 20 nm. With increasing crystal thickness, the FWHM and P/V ratio increases and decreases, respectively, indicating the advantage of using a thin crystal for high-resolution EDS mapping.

Dilute impurities and growth conditions can drastically affect the transport properties of TiSe2, especially below the charge density wave transition. In this paper, we discuss the effects of cooling rate, annealing time and annealing temperature on the transport properties of TiSe2: slow cooling of polycrystalline TiSe2 post-synthesis drastically increases the low temperature resistivity, which is in contrast to the metallic behavior of single-crystalline TiSe2 due to charge doping from the residual iodine transport agent. A logarithmic increase of resistivity upon cooling and negative magnetoresistance with a sharp cusp around zero field are observed for the first time for the polycrystalline TiSe2 samples, pointing to weak-localization effects due to low dimensionality. Annealing at low temperatures has a similar, but less drastic effect. Furthermore, rapid quenching of the polycrystalline samples from high temperatures freezes in disorder, leading to a decrease in the low temperature resistivity.

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