No abstract

The findings of this report are not to be construed as an official Department of the Army position, unless so designated by other authorized documents.The use of trade names or manufacturers' names in this report does not constitute indorsement of any "commercial pioduct.Ptibih 'eoo,nO bu4dfl to, this coIeclOt, Of fornation %t estn'atr to a.C'aqe I,~a iour oe sor ~ ri'ciu.ding the t."te tor , ew nst uctitttons. %errin "q Cst'fl data sources gathering and mnamflrinq the data need. and compietrio and e ,rk-ng th~e coilectliof Of lnlO,.tln Senld CO Mments regarding this burden estimate or anv othter aspect of this coltetnxon of ntntmatiofl nou.ding suggetion% tot reducino this oodden to vathngton Headquattef% Se-ces, ,rectorate to( information Operations and Reorts. 12 5 Jefferson 00,,i mtqt'ay, Suite 1204. Arleinn VA 22202-4302 and t te Officeof Managemsent and Budge!,. Paperwork Rkction Proect (004OtBB).Washnqton. DC 20503 AGENCY USE ONLY (Leave blank)2. REPORT -DATE 3. REPORT TYPE AND DATES COVERED

No abstract

The findings in this report are not to be construed as an official Department of the Army position, unless so designated by other authorized documents.

We report the electrical properties of a full-bit functional 8Mb 1T-1C Embedded Ferroelectric Random Access Memory (eFRAM) fabricated within a low-leakage 130nm 5LM Cu interconnect CMOS logic process. To increase manufacturability and reliability margins, we have introduced a single-bit substitution methodology that replaces bits at the low-end of the original distribution with redundant elements leading to an increased signal margin. Further, we have fabricated a Digital Signal Processor (DSP) using the eFRAM process flow and have shown that the operating frequency is nearly the same relative to the CMOS baseline. With the development of logic-compatible eFRAM, we have created a technology platform that enables ultra-low-power devices.