In this work, we show that digital image processing methods can be applied to enhance the quality of X-ray microscopic images. One application of X-ray microscopy is imaging of biological specimens in their natural aqueous environment. Since X radiation can introduce structural changes in these objects when observing them at room temperature, it is sometimes necessary to take images with short exposure time. The image quality can thus be reduced due to low signal-to-noise ratio (SNR). Digital image processing methods can be applied to reduce image degradation caused by noise. Another example of a digital image processing method we applied to X-ray microscopy images is contrast enhancement of structures near the resolution limit of the microscope. Structures of 20 nm in size, which show weak contrast in the original image, become more clearly visible after restoration. Since image restoration methods are based on the knowledge of the optical transfer function (OTF) or the point spread function (PSF), a handy method for quick PSF determination is presented. An iterative image-restoration method was applied to pictures obtained with the Gottingen transmission X-ray microscope at BESSY. Results of image quality enhancement by this method are shown for images of polytene chromosomes of Chironomus Thummi larvae, test-structures and in situ hybridization on Xist RNA using biotinilated DNA probe.

We have designed, constructed and characterized a grating that focuses electromagnetic radiation at specific frequencies out of a dielectric waveguide. A simple theoretical model predicts the focusing behaviour of these chirped gratings, along with numerical results that support our assumptions and improved the grating geometry. The leaky waveguide was 3D printed and characterized at 120 GHz demonstrating its potential for manipulating terahertz waves.

No abstract

No abstract

The ongoing pursuit for laser device emitting in the near‐infrared spectral region on GaAs substrates has led to various material systems and device concepts. Alloys containing dilute amounts of Bismuth are promising candidates due to the already substantial band gap shift when incorporating low molar fractions of Bi in the GaAs host lattice. However, devices emitting at technologically essential wavelengths of 1.3 and 1.55 μm have yet to be demonstrated using this material system. Especially the non‐equilibrium nature of the growth conditions required to grow the metastable material makes epitaxial growth with high molar fractions of Bi challenging. An alternate approach to reach the desired wavelengths exploits a type‐II band alignment between two materials to push the emission wavelength further into the telecom bands. Here, room‐temperature laser operation of the first type‐II structure employing Ga(As,Bi) as hole confining layer and (Ga,In)As as electron confining layer is demonstrated. Sample growth is conducted by low‐pressure metalorganic vapour phase epitaxy. Broad area laser devices are processed and characterized by electroluminescence measurements. A threshold current density of 3.86 kA/cm2 and emission wavelength of 1037 nm are observed, showing this device concept's potential for future lasers in the telecom bands.