The optical properties (reflectivity, transmissivity, and absorptivity) of metallic thin films (MTFs) of copper, silver, gold, and aluminum upon irradiation by low-energy ( ∼ 0.5 k e V ) inert gaseous argon ( A r + ) ion beams are investigated using UV-VIS-NIR spectrophotometry. The optical constants (real and imaginary parts of the refractive index) of both pristine as well as irradiated MTFs are measured by employing the pseudo-Brewster angle technique. The implanted low-energy A r + ions modify the dielectric constant of pure MTFs, which in turn changes the refractive index and therefore alters the optical properties of MTFs. Results indicate that the reflectivity decreases, whereas the transmissivity increases with A r + ion fluence. Absorptivity, calculated using the energy conservation law, increases with ion fluence. The optical modification of MTFs is discussed in light of Maxwell-Garnett theory, and possible applications are outlined.

We report the formation of self-organized microconical arrays on copper surface when exposed to high flux (5.4 × 1015 cm−2 s−1) of 2 keV argon ion beams at normal incidence. The created microconical arrays are explored for field emission properties. The surface morphologies are investigated by scanning electron microscopy and atomic force microscopy. The local work function variation is analyzed by Kelvin probe force microscopy, and the argon content in the irradiated layer is measured with X-ray Photoelectron Spectroscopy. The average aspect ratio (base width/height) of microstructures for individual irradiated samples is found to increase from 0.7 to 1.5 with a decrease in ion fluence. The ion concentration is highest (3.89 %) for a fluence of 4.7 × 1018 cm−2, which asserts the formation of atomically heterogeneous surface due to subsurface ion implantation. An enhancement in the field emission properties of the argon ion–treated copper substrates at a fluence of 4.7 × 1018 cm−2 with a low turn-on voltage of 2.33 kV and with electron emission current 0.5 nA has been observed. From the Fowler–Nordheim equations, the field enhancement factor is calculated to be 5,561 for pristine copper, which gets enhanced by a factor of 2–8 times for irradiated substrates. A parametric model is considered, by taking into account the modified local work function caused due to structural undulations of the microstructures and presence of implanted argon ions, for explaining the experimental results on the field enhancement factor and emission current.

A comparative study of the field emission properties of conical arrays of atomically heterogeneous, self-organized, micro–submicro–nanodimensional structures, irradiated at normal incidence by high flux of 2 keV argon ([Formula: see text]) and krypton ions ([Formula: see text]) on copper substrates, without employing any external seeding, is presented. The variation in surface structural growths with ion beam fluence is investigated using scanning electron, atomic force, and transmission electron microscopy. The exposed surfaces are atomically heterogeneous due to the presence of embedded argon and krypton ions in the interstitial layers ([Formula: see text]nm) as observed from the x-ray photoelectron spectroscopy analysis. Kelvin probe force microscopy is employed to analyze the variation in local work function caused by surface deformities and implantation of inert gaseous ions. The conical arrays are naturally selected field emitter sources, and their field enhancement factor is calculated from the Fowler–Nordheim equations. The argon ion treated substrate at a fluence of [Formula: see text] gives rise to uniformly distributed structures and has a low turn-on voltage of 2.76 kV with an electron emission current of 0.58 nA. Among the krypton ion irradiated substrates, the sample irradiated at the highest fluence of [Formula: see text] produces self-organized conical arrays having uniform dimension, orientation, distribution, and even a higher electron emission current of 0.81 nA with a lower turn-on voltage of 2.12 kV. Thus, it may be concluded that krypton ion irradiation provides better generation of naturally selected arrays of field emitters.