No abstract

Articles you may be interested inStrain reduction and crystal improvement of an InGaN/GaN quantum-well light-emitting diode on patterned Si (110) substrate Appl.Effects of In composition on ultraviolet emission efficiency in quaternary InAlGaN light-emitting diodes on freestanding GaN substrates and sapphire substrates

We report on the improvement of light output power of InGaN/GaN blue light-emitting diodes (LEDs) by lateral epitaxial overgrowth (LEO) of GaN using a pyramidal-shaped SiO(2) mask. The light output power was increased by 80% at 20 mA of injection current compared with that of conventional LEDs without LEO structures. This improvement is attributed to an increased internal quantum efficiency by a significant reduction in threading dislocation and by an enhancement of light extraction efficiency by pyramidal-shaped SiO(2) LEO mask.

No abstract

A two-dimensional silica colloidal particle was used to etch a p-GaN surface. By treating the p-GaN surface with polyelectrolyte (PE), mono-dispersed silica colloidal particles, 500 nm in diameter, could be uniformly distributed on a 2-in. p-GaN surface. The patterns on the p-GaN surface were produced by a plasma etching process using these colloidal particles as a mask. Etching depths of 150 and 200 nm were produced on the p-GaN surface of LED samples and an increase in the optical output power of 46.7% was observed compared to a reference sample without patterns on the p-GaN surface.