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By using PLASMASK(*) resist in the DESIRE( *) process, multilayer resist performances can be achieved on a single layer .The aim of this paper is to show , for each step of DESIRE process , the influence of the different parameters on lithographic performances , and finally the use of such process on critical levels for 0.6µm CMOS technology .Exposure experiment have been performed on an I -line ASM stepper ( NA = 0.4 ) A modified HMDS vapor prime from SVG has been used for resist silylation . Silicon depth profiles in PLASMASK resist versus dose, time and temperature of silylation have been measured by RBS method. Statistical Experimental Designs (S.E.D.) have allowed the determination of process parameters influence as well as the identification of their interactions on lithographic performances .The resulting optimized process will be demonstrated on a metal 1, 0.611m CMOS technology.* PLASMASK and DESIRE are trademarks from UCB Electronics.

A new positive working system for e-beam lithography, called PRIME (Positive Resist IMage by dry Etching) is proposed. High contrast (about 6) and resolution 75 nm L/S in O.351um thick resist are achieved. Very steep profiles can be obtained on thick resist even at low accelerating voltage as O.2pm hole in l.2pm thick resist at 20 keV. To be able to quantify both intra and inter proximity effect on positive tone resist specific two layers electric tests chips were designed. Then PRIME process has been compared, in terms of proximity effects magnitude, at 20kV and 50 kV, to RAY-PF resist showing clearly advantages over such three components novolac based positive resist.

IntroductionEuropean microelectronics industry recovered a strong position within last years, thanks in part to large cooperative programs involving both national and European funding. But, keeping in-line with Moore's law, entering the nano-era requires an increasingly effort in research and development. And for this, Europe again has specific strengths due to the synergy between national and European level initiatives. In the first part of this presentation, we will describe some funding programs and mechanisms for nanotechnologies in Europe, then we will cover some key results of European labs involved in this field and will point out large national initiatives aiming to set-up European centers of excellence in the field of nanotechnologies. In the second part, we will look in depth into the nanolithography activities in Europe, which in fact cover a broad spectrum of technologies, from electron-beam to extreme UV, including nanoimprint or more innovative concepts.

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