No abstract

No abstract

A versatile pulsed I(V ) and 40-GHz RF measurement system is described with all the know-how and methods to perform efficient, safe, and reliable nonlinear transistor measurements. Capability of discrimination between thermal and trapping effects with a pulse setup is demonstrated. Capture and emission constant times of trapping effects are measured. A method to electrically measure the thermal resistance and capacitance of transistors with a pulse setup is proposed.