A versatile pulsed I(V ) and 40-GHz RF measurement system is described with all the know-how and methods to perform efficient, safe, and reliable nonlinear transistor measurements. Capability of discrimination between thermal and trapping effects with a pulse setup is demonstrated. Capture and emission constant times of trapping effects are measured. A method to electrically measure the thermal resistance and capacitance of transistors with a pulse setup is proposed.

No abstract

A fully automated multiharmonic load-pull system allowing accurate measurement and control of the fiist three harmonic load terminations of RF and microwave transistors is presented in this paper.The technical originality of the proposed system lies in that the first. second and third harmonic load terminations can be independently and automatically monitod and fixed while varying the input power driving the transistor at the fundamental frequency.Appropriate hardware and software allow fast and automatic plots of power / efficiency performances of DUTs versus input power for different harmonic loadings.To demonstrate an attractive application of the system, measurements of a 1800 Fm gate periphery MESFET at 1.8GHz for mobile communication applications are presented.Both suitable harmonic load terminations and nonappropriate ones yielding respectively optimum and poor power added efficiency are given.