Thermally activated delayed fluorescence (TADF) materials have emerged as an efficient emitter for achieving high efficiency of blue organic light emitting diodes (OLEDs). However, it is challenging to satisfy both high device efficiency and long operational lifetime together. Here, highly efficient and electrochemically stable blue TADF emitter, 5‐(5,9‐dioxa‐13b‐boranaphtho[3,2,1‐de]anthracen‐7‐yl)‐10,15‐diphenyl‐10,15‐dihydro‐5H‐diindolo[3,2‐a:3′,2′‐c]carbazole (DBA‐DI) is designed and synthesized for high efficiency and long lifetime OLED. This emitter exhibits high photoluminescence quantum yield of 95.3%, small single‐triplet energy gap of 0.03 eV, short delayed exciton lifetime of 1.25 µs, and high bond dissociation energy (BDE). Also, phosphine oxide free high triplet energy host systems (single and mixed) and exciton blocking layer materials are analyzed using molecular and optical simulations to find an efficient host system with high BDE and suitable emission zone for high efficiency and stable OLEDs. The fabricated OLED with DBA‐DI and high triplet host exhibited a maximum external quantum efficiency (EQE) of 28.1% with blue CIE color coordinates of (0.16, 0.39) and long operational lifetime (LT50) of 329 h at the initial luminance of 1000 cd m−2. Furthermore, the mixed host‐based TADF device showed a slightly lower EQE of 26.4% and almost two times longer lifetime (LT50: 540 h) than the single host device.

A red fluorescent material, 1,3,7,9-tetrakis(4-(tert-butyl)phenyl)-5,5-difluoro-10-(2-methoxyphenyl)-5H-4l4,5l4-dipyrrolo[1,2c:2′,1′-f ][1,3,2]diazaborinine (4tBuMB), as an emitting dopant in a thermally activated delayed fluorescence (TADF) sensitized hyperfluorescence organic light-emitting diode (HFOLED) is reported. The 4tBuMB shows a high photoluminescence quantum yield (PLQY) of 99% with an emission maximum at 620 nm and a full width at halfmaximum (fwhm) of 31 nm in solution. Further, it shows a deep lowest unoccupied molecular orbital (LUMO) of 3.83 eV. Thus, two TADF materials, 4CzIPN and 4CzTPN, as sensitizing hosts, are selected on the basis of a suitable LUMO level and spectrum overlap with 4tBuMB. The fabricated HFOLED device with 4CzTPN as a sensitizing host and 4tBuMB as an emitting dopant shows a maximum external quantum efficiency (EQE), an emission maximum, an fwhm, and CIE coordinates of 19.4%, 617 nm, 44 nm, and (0.64, 0.36), respectively. The electroluminance performances of the 4CzTPN sensitized device are higher than those of the 4CzIPN-based device, which is attributed to a higher Forster resonance energy transfer (FRET) rate and reduced intersystem crossing/reverse intersystem crossing (ISC/RISC) cycles of the former. Also, the 4CzTPN-based HF device shows a longer device lifetime (LT 90 ) of 954 h than the 4CzIPN-baed device (LT 90 of 57 h) at 3000 cd m −2 . The higher device stability is due to the higher bond dissociation energies (BDEs) of 4CzTPN and 4tBuMB than that of 4CzIPN.

Two new blue TADF emitters, 3CzTB and M3CzB, for application in highly efficient organic light-emitting diodes are reported.

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