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A wafer bending method has been devised to impose biaxial strains on Pb(Zr0.35Ti0.65)O3 (PZT) thin films ranging in thickness from 700 to 4000 Å grown by metal-organic chemical vapor deposition. The ferroelectric and dielectric properties of PZT capacitors were investigated while the film was placed under biaxial tension. It was observed that biaxial strains as small as 0.08% can reversibly reduce the remanent polarization of PZT films by 12 to 14% for all film thicknesses. The small-signal capacitance measured at voltages significantly larger than the switching voltage increased with increasing biaxial tension. These observations present clear evidence of room temperature strain accommodation in PZT thin films by reversible 90° domain wall motion that changes the volume fraction of the film that switches during electrical testing.

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Electrochemical fabrication of PbSn C4s (controlled collapse chip connection) offers significant cost, reliability, and environmental advantages over the currently employed evaporation technology. A continuous seed layer is required for through-mask electrodeposition of the solder alloy. This layer becomes the ball limiting metallurgy (BLM) for the solder pad after etching. The seed layer metallurgy and the BLM etching are crucial to obtaining mechanically robust C4s. In the present study, the issues related to the selection of seed layer metallurgy, uniformity of plating and etching, and mechanical integrity of C4s have been investigated. The resul~s demonstrate the feasibility of electrochemically fabricating highly reliable PbSn (97/3) C4 structures with a high degree of dimensional uniformity on a variety of wafer sizes ranging up to 200 ram.

Structural and surface potential characterization of annealed HfO 2 and ( HfO 2 ) x ( SiO 2 ) 1 -x films Relationships among equivalent oxide thickness, nanochemistry, and nanostructure in atomic layer chemicalvapor-deposited Hf-O films on Si J. Appl. Phys. 95, 5042 (2004); 10.1063/1.1689752Growth and effects of remote-plasma oxidation on thin films of HfO 2 prepared by metal-organic chemical-vapor deposition J.