Ferroelectric strontium bismuth tantalate thin films deposited by metalorganic chemical vapour deposition (MOCVD)

Roeder, Jeffrey F.; Hendrix, B. C.; Hintermaier, Frank; Desrochers, Debra A.; Baum, Thomas H.; Bhandari, Gautam; Chappuis, M; Buskirk, Peter C. Van; Dehm, C.; Fritsch, E.; Nagel, N.; Wendt, H.; Cerva, H.; Hönlein, W.; Mazuré, C.

doi:10.1016/s0955-2219(98)00451-8

Cited by 39 publications

(33 citation statements)

References 9 publications

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“…Among them, triphenyl bismuth (Bi(C 6 H 5 ) 3 ) represents one of the most used precursors because of its thermal stability upon sublimation and during storage. Various aspects of the MOCVD process using this precursor have been studied, [17,41,42] and very recently an extended kinetic and mechanistic investigation was reported by the present authors. [42] On the other hand, Bi(tmhd) 3 has very often been adopted as the precursor for the development of the MOCVD process for ferroelectric (SBT, BLT) materials, [8,17,28,31±37] despite its poor thermal stability upon sublimation and during storage.…”

Section: Introductionmentioning

confidence: 85%

Comparison of Thermal and Mass-Transport Properties of Bi(tmhd)3, Bi(p-tol)3, and Bi(o-tol)3 MOCVD Precursors

Bedoya

Condorelli

Finocchiaro

et al. 2005

Chem. Vap. Deposition

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Metal-organic (MO)CVD processes using three different precursors (Bi(tmhd) 3 , 3 , and Bi(o-tol) 3 ) have been investigated. Combined, thermal, and mass spectroscopic investigations have provided information on their thermal robustness during sublimation processes. In-situ Fourier-transform infrared (FTIR) measurements have allowed the monitoring of masstransported precursors during MOCVD experiments. Temperature windows of 190±277 C, 170±270 C, and 150±220 C have proved suitable for the efficient vaporization of Bi(tmhd) 3 , Bi(p-tol) 3 , and Bi(o-tol) 3 , respectively, even though aryl precursors have proved to be more stable than b-diketonate during the sublimation and transport processes.Above 350 C, decomposition during the MOCVD processes has been observed for all the precursors. In the case of Bi(tmhd) 3 and Bi(o-tol) 3 it involves the ligand fragmentation, while for Bi(p-tol) 3 , dissociation of the intact aryl ring seems to occur.

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Section: Introductionmentioning

confidence: 85%

Comparison of Thermal and Mass-Transport Properties of Bi(tmhd)3, Bi(p-tol)3, and Bi(o-tol)3 MOCVD Precursors

Bedoya

Condorelli

Finocchiaro

et al. 2005

Chem. Vap. Deposition

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“…Bi precursors are indeed not highly volatile, and they are particularly unstable as they can react easily with moisture. For the deposition of Bi-based ferroelectric oxides (such as Bi 4-x La x Ti 3 O 12 , [21] Sr 1-x Bi 2+x Ta 2 O 9 , [22] or Bi 4 Ti 3 O 12 [23] ), Bi(Ph) 3 and Bi(tmhd) 3 appear as the most commonly used Bi-precursors (Ph = phenyl and tmhd = tris 2,2,6,6-tetramethyl-3,5-heptanedionate). Recently, a new bismuth precursor, Bi(mmp) 3 (mmp = 1-methoxy-2-methyl-2-propoxide) has been proposed and tested for the MOCVD deposition of bismuth oxide.…”

Section: Introductionmentioning

confidence: 99%

MOCVD of BiFeO₃ Thin Films on SrTiO₃

Théry¹,

Dubourdieu²,

Baron³

et al. 2007

Chemical Vapor Deposition

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Bi-Fe-O thin films are grown by liquid-injection metal-organic (MO)CVD on (001) SrTiO 3 substrates using two different bismuth precursors, Bi(tmhd) 3 and Bi(mmp) 3 . The precursor Bi(mmp) 3 is found to be more effective for Bi incorporation in the films. Epitaxial BiFeO 3 films are obtained and no evidence for secondary phases such as Fe 2 O 3 or Bi 2 O 3 is found by X-ray diffraction (XRD) or transmission electron microscopy (TEM) studies. However, the presence of a multiple binding environment for Fe 3+ is shown from the X-ray photoelectron spectroscopy (XPS) analyses.

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“…[10][11][12] b-diketonates and related complexes, especially those formed with the 2,2,6,6-tetramethylheptane-3,5-dionato (tmhd) ligand, are the most widely used precursors. [1] Due to the large size and low charge of the Group 2 metal ions, homoleptic tmhd complexes exist as oligomers (e.g., [Sr(tmhd) 2 ] 3 [13] and [Ba(tmhd) 2 ] 4 [14] ), which result in low precursor vapor pressures.…”

Section: Introductionmentioning

confidence: 99%

“…[7,8] Monomers, formed from coordinating polyethers and polyamines to Sr(tmhd) 2 , [15][16][17][18][19] generally have higher vapor pressures; however, dissociation of the coordinating amines or polyethers during heating has made the delivery of these precursors more amenable to liquid-injection methods. [10,16,[18][19][20] Recently, we synthesized Ga, Al, and Zn precursors using ligands derived from HN(CH 2 CH 2 NMe 2 ) 2 . [21,22] Here we report the synthesis and structures of two monomeric Sr(tmhd) 2 adducts of this amine ligand, and the use of one of these, Sr(tmhd) 2 [HN(CH 2 CH 2 NMe 2 ) 2 ], in the CVD of strontium hafnium oxide films.…”

Section: Introductionmentioning

confidence: 99%

Synthesis and Structures of Bis(2‐dimethylaminoethyl)amine Adducts of Strontium Bis(2,2,6,6‐tetramethylheptane‐3,5‐dionate) and Their Use in the CVD of Cubic Strontium‐Doped Hafnium Dioxides

Luo¹,

Yu²,

Kucera³

et al. 2007

Chemical Vapor Deposition

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Monomeric, eight-coordinate Sr(tmhd) 2 [HN(CH 2 CH 2 NMe 2 ) 2 ](EtOH) (1), where tmhd is 2,2,6,6-tetramethylheptane-3,5-dionato, is synthesized from the reactions of HN(CH 2 CH 2 NMe 2 ) 2 , H-tmhd, and Sr(OEt) 2 (EtOH) 4 . Heating compound 1 at 130°C dissociates EtOH to form monomeric, seven-coordinate Sr(tmhd) 2 [HN(CH 2 CH 2 NMe 2 ) 2 ] (2). A combination of thermogravimetric analysis (TGA) and thermal stability tests establishes that compound 2 is stable at temperatures below 220°C. In a cold-wall, low-pressure CVD reactor, 2 is used as a liquid precursor at 115 to 175°C to deposit high-j, dielectric, strontium hafnium oxide films in combination with the use of Hf(O t Bu) 4 . The Sr/(Sr + Hf) atomic ratios of the films range from 0 to 0.83. X-ray diffraction (XRD) shows that films with low Sr doping, e.g., ≤ 0.15, exhibit a crystalline phase consistent with Sr-stabilized cubic hafnia, while films with higher Sr contents are amorphous. The dielectric constants of the films increase as the proportion of the cubic phase increases. A maximum value of 25 is obtained for the film with a Sr/(Sr + Hf) ratio of 0.07.

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Ferroelectric strontium bismuth tantalate thin films deposited by metalorganic chemical vapour deposition (MOCVD)

Cited by 39 publications

References 9 publications

Comparison of Thermal and Mass-Transport Properties of Bi(tmhd)3, Bi(p-tol)3, and Bi(o-tol)3 MOCVD Precursors

Comparison of Thermal and Mass-Transport Properties of Bi(tmhd)3, Bi(p-tol)3, and Bi(o-tol)3 MOCVD Precursors

MOCVD of BiFeO₃ Thin Films on SrTiO₃

Synthesis and Structures of Bis(2‐dimethylaminoethyl)amine Adducts of Strontium Bis(2,2,6,6‐tetramethylheptane‐3,5‐dionate) and Their Use in the CVD of Cubic Strontium‐Doped Hafnium Dioxides

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Ferroelectric strontium bismuth tantalate thin films deposited by metalorganic chemical vapour deposition (MOCVD)

Cited by 39 publications

References 9 publications

Comparison of Thermal and Mass-Transport Properties of Bi(tmhd)3, Bi(p-tol)3, and Bi(o-tol)3 MOCVD Precursors

Comparison of Thermal and Mass-Transport Properties of Bi(tmhd)3, Bi(p-tol)3, and Bi(o-tol)3 MOCVD Precursors

MOCVD of BiFeO3 Thin Films on SrTiO3

Synthesis and Structures of Bis(2‐dimethylaminoethyl)amine Adducts of Strontium Bis(2,2,6,6‐tetramethylheptane‐3,5‐dionate) and Their Use in the CVD of Cubic Strontium‐Doped Hafnium Dioxides

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MOCVD of BiFeO₃ Thin Films on SrTiO₃