The memory effects of ZnO nanoparticles embedded in a polyimide (PI) matrix were investigated. Transmission electron microscopy images and selected area electron diffraction patterns showed that ZnO nanocrystals were created inside the PI layer. Capacitance-voltage (C-V) measurements on Al/PI/nanocrystalline ZnO∕PI∕p-Si structures at 300K showed a metal-insulator-semiconductor behavior with a flatband voltage shift due to the existence of the ZnO nanocrystals, indicative of trapping, storing, and emission in the electrons in the ZnO nanocrystals. Possible electronic structures corresponding to the writing and erasing operations for the Al/PI/nanocrystalline ZnO∕PI∕p-Si device are described on the basis of the C-V results.

Self-assembled Ni1−xFex nanoparticles embedded in a polyimide (PI) matrix were formed by curing Ni1−xFex thin films with PI precursor layers. Transmission electron microscopy images and selected area electron-diffraction patterns showed that Ni1−xFex nanocrystals were created inside the PI layer. Capacitance-voltage measurements on Al/PI/nanocrystalline Ni1−xFex∕PI∕n-Si structures at 300K showed a metal-insulator-semiconductor behavior with a large flatband voltage shift due to the quantum confinement effect of the Ni1−xFex nanocrystals in spite of the possible existence of a thick tunnel PI layer, and conductance-voltage measurements showed a broad conductance peak around the flatband voltage. The present results suggest that self-assembled Ni1−xFex nanocrystals embedded in a PI layer hold promise for potential applications in nonvolatile flash memories with floating gates consisting of Ni1−xFex nanocrystals embedded in a PI layer.

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