IDC, invasive ductal carcinoma; ILC, invasive lobular carcinoma; IMC, invasive mucinous carcinoma. *Indicates patient with hepatitis C infection. † Indicates patients receiving therapy before tumor removal.

In x Ga 1-x As y Sb 1-y thermophotovoltaic (TPV) diodes were grown lattice-matched to GaSb substrates by Metal Organic Vapor Phase Epitaxy (MOVPE) in the bandgap range of E G = 0.5 to 0.6eV. InGaAsSb TPV diodes, utilizing front-surface spectral control filters, are measured with thermal-to-electric conversion efficiency and power density of η TPV =19.7% and PD =0.58 W/cm 2 respectively for a radiator temperature of T radiator = 950°C, diode temperature of T diode = 27°C, and diode bandgap of E G = 0.53eV. Practical limits to TPV energy conversion efficiency are established using measured recombination coefficients and optical properties of front surface spectral control filters, which for 0.53eV InGaAsSb TPV energy conversion is η TPV =28% and PD =0.85W/cm 2 at the above operating temperatures. The most severe performance limits are imposed by (i) diode opencircuit voltage (V OC) limits due to intrinsic Auger recombination and (ii) parasitic photon absorption in the inactive regions of the module. Experimentally, the diode V OC is 15% below the practical limit imposed by intrinsic Auger recombination processes. Analysis of InGaAsSb diode electrical performance vs. diode architecture indicate that the V OC and thus efficiency is limited by extrinsic recombination processes such as through bulk defects.