In x Ga 1-x As y Sb 1-y thermophotovoltaic (TPV) diodes were grown lattice-matched to GaSb substrates by Metal Organic Vapor Phase Epitaxy (MOVPE) in the bandgap range of E G = 0.5 to 0.6eV. InGaAsSb TPV diodes, utilizing front-surface spectral control filters, are measured with thermal-to-electric conversion efficiency and power density of η TPV =19.7% and PD =0.58 W/cm 2 respectively for a radiator temperature of T radiator = 950°C, diode temperature of T diode = 27°C, and diode bandgap of E G = 0.53eV. Practical limits to TPV energy conversion efficiency are established using measured recombination coefficients and optical properties of front surface spectral control filters, which for 0.53eV InGaAsSb TPV energy conversion is η TPV =28% and PD =0.85W/cm 2 at the above operating temperatures. The most severe performance limits are imposed by (i) diode opencircuit voltage (V OC) limits due to intrinsic Auger recombination and (ii) parasitic photon absorption in the inactive regions of the module. Experimentally, the diode V OC is 15% below the practical limit imposed by intrinsic Auger recombination processes. Analysis of InGaAsSb diode electrical performance vs. diode architecture indicate that the V OC and thus efficiency is limited by extrinsic recombination processes such as through bulk defects.

Simulation has provided valuable quantification of the fundamental behavior of thermophotovoltaic cell networks. The results of simulation studies have supported the design and fabrication of small-scale demonstration networks and are expected to guide assembly of large-scale systems. This paper describes the methodology and software simulator developed to address issues in thermophotovoltaic (TPV) networking, including failure analysis, electrical network design, and nonuniform illumination. Results from simulation studies are given illustrating their application to the design and fabrication of small-scale TPV arrays.

Abstract. TPV technology has advanced rapidly in the last five years, with diode conversion efficiency approaching >30%, and filter efficiency of ~80%. These achievements have enabled repeatable testing of 20% efficient small systems, demonstrating the potential of TPV energy conversion. Near term technology gains support a 25% efficient technology demonstration in the two year timeframe. However, testing of full size systems, which includes efficiency degradation mechanisms, such as: nonuniform diode illumination, diode and filter variability, temperature non-uniformities, conduction/convection losses, and lifetime reliability processes needs to be performed. A preliminary analysis of these differential effects has been completed, and indicates a near term integrated system efficiency of ~15% is possible using current technology, with long term growth to 18-20%. This report addresses the system performance issues.