Wide-range low-voltage continuous color tuning is achieved in multilayer light-emitting diodes based exclusively on the commonly used high-efficiency electroluminescent conjugated polymers. There are three layers for red, green, and blue emission, and one extra layer for electron blocking. The color of the emitted photon depends on the position of the electron-hole recombination. Due to the stronger field dependence of the electron mobility relative to the hole mobility, the recombination zone is pushed away from the cathode and concentrated in different emissive layers as the voltage increases.

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In this paper, we demonstrated the high performance GaN-based LEDs by using a high aspect ratio cone-shape nano-patterned sapphire substrate (HAR-NPSS). We utilized nano-imprint lithography (NIL) and dry-etching system to fabricate a high depth HAR-NPSS. The micro-scale patterned sapphire substrate (PSS) was also used for comparison. A great enhancement of light output was observed when GaN-based LEDs were grown on a HAR-NPSS or a PSS. The light output power of LEDs with a HAR-NPSS and LEDs with a PSS were enhanced of 49 and 38% compared to LEDs with a unpatterned sapphire substrate. The high output power of the LED with a HAR-NPSS indicated that the technology of NAR-NPSS not only can improve the crystalline quality of GaN-based LEDs but also a promising development to a NPSS.Index Terms-GaN, light-emitting diodes (LEDs), nano-imprint lithography (NIL), nano-patterned sapphire substrate (NPSS).

We presented a low efficiency droop behavior green light emitting diodes (LEDs) with a quaternary content InAlGaN/GaN superlattice electron blocking layer (SL-EBL). The light output power shows a 57% enhancement and only 30% efficiency droop, which is attributed to a smooth band bending with a uniform carrier distribution. Index Terms-Green LEDs, Efficiency droop, Quaternary superlattice electron blocking layer