No abstract

In this paper, an integrated hydrogenated amorphous silicon (a‐Si: H) thin‐film transistor (TFT) gate driver circuit design with high reliability and the narrow border for middle size liquid crystal display is demonstrated. The circuit design with two sets of the low‐level holding unit can increase the reliability and suppress the threshold voltage (Vth) shift of TFT in the circuit. In addition, the low‐level holding unit is floating in the Q node pre‐charge period, ensuring that the low‐level holding unit can be efficiently turn off during the selected stage working. As a result, the circuit is very stable even at the TFT Vth shift of 3V in the high‐temperature operation.

An optimized hybrid planar heterojunction (PHJ) of small molecule organic solar cells (SM-OSCs) based on copper phthalocyanine (CuPc) as donor and fullerene (C 60 ) as acceptor was fabricated, which obviously enhanced the performance of device by sequentially using both MoO 3 and pentacene as double anode buffer layers (ABL), also known as hole extraction layer (HEL). A series of the vacuum-deposited ABL, acting as an electron and exciton blocking layer, were examined for their characteristics in SM-OSCs. The performance and reliability were compared between conventional ITO/ABL/CuPc/C 60 /BCP/Ag cells and the new ITO/double ABL/CuPc/C 60 /BCP/Ag cells. The effect on the electrical properties of these materials was also investigated to obtain the optimal thickness of ABL. The comparison shows that the modified cell has an enhanced reliability compared to traditional cells. The improvement of lifetime was attributed to the idea of double layers to prevent humidity and oxygen from diffusing into the active layer. We demonstrated that the interfacial extraction layers are necessary to avoid degradation of device. That is to say, in normal temperature and pressure, a new avenue for the device within double buffer layers has exhibited the highest values of open circuit voltage (V oc ), fill factor (FF), and lifetime in this work compared to monolayer of ABL.

A systematic research of image sticking (IS) in a fringe field switching liquid crystal displays is demonstrated. After the IS test of mosaic pattern and switching to the mid-grey level image, the root mean square voltage (Vrms) difference between the black and white block should be controlled under the 1 mV to avoid the phenomenon of image sticking detected by the human eye. A detailed analysis of voltage calculation and how to decrease the difference ofVrms are presented. Author Keywords image sticking; fringe field switching; flexoelectric effect; residual DC voltage; P-144 / J.-C. Ke SID 2018 DIGEST • 1707 ISSN 0097-996X/18/4703-1707-$1.00