A highly sensitive single-walled carbon nanotube/C60 -based infrared photo-transistor is fabricated with a responsivity of 97.5 A W(-1) and detectivity of 1.17 × 10(9) Jones at 1 kHz under a source/drain bias of -0.5 V. The much improved performance is enabled by this unique device architecture that enables a high photoconductive gain of ≈10(4) with a response time of several milliseconds.

The electronic properties of solution-processable small-molecule organic semiconductors (OSCs) have rapidly improved in recent years, rendering them highly promising for various low-cost largearea electronic applications. However, practical applications of organic electronics require patterned and precisely registered OSC films within the transistor channel region with uniform electrical properties over a large area, a task that remains a significant challenge. Here, we present a technique termed "controlled OSC nucleation and extension for circuits" (CONNECT), which uses differential surface energy and solution shearing to simultaneously generate patterned and precisely registered OSC thin films within the channel region and with aligned crystalline domains, resulting in low device-to-device variability. We have fabricated transistor density as high as 840 dpi, with a yield of 99%. We have successfully built various logic gates and a 2-bit halfadder circuit, demonstrating the practical applicability of our technique for large-scale circuit fabrication.organic semiconductors | patterning | small molecules | transistors | circuits

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We demonstrate a technique to convert p-type single-walled carbon nanotube (SWNT) network transistor into ambipolar transistor by thermally evaporating C60 on top. The addition of C60 was observed to have two effects in enhancing ambipolar characteristics. First, C60 served as an encapsulating layer that enhanced the ambipolar characteristics of SWNTs. Second, C60 itself served as an electron transporting layer that contributed to the n-type conduction. Such a dual effect enables effective conversion of p-type into ambipolar characteristics. We have fabricated inverters using our SWNT/C60 ambipolar transistors with gain as high as 24, along with adaptive NAND and NOR logic gates.