Significant Enhancement of Infrared Photodetector Sensitivity Using a Semiconducting Single‐Walled Carbon Nanotube/C₆₀ Phototransistor

Abstract

A highly sensitive single-walled carbon nanotube/C60 -based infrared photo-transistor is fabricated with a responsivity of 97.5 A W(-1) and detectivity of 1.17 × 10(9) Jones at 1 kHz under a source/drain bias of -0.5 V. The much improved performance is enabled by this unique device architecture that enables a high photoconductive gain of ≈10(4) with a response time of several milliseconds.

Photo-FETs: Phototransistors Enabled by 2D and 0D Nanomaterials

“…80-82 Although its electrical properties are excellent for charge transport, the inefficient absorption within the one-dimensional body calls for a sensitizing approach. Light induced charge transfer, increased photosensitivity, and reported responsivities up to 10 2 -10 4 A/W have been achieved by combining CNTs with quantum dots 83-85 , perovskites 86 , polymers and molecules [87][88][89][90] , and fullerene (C60) 91 . In some of these device concepts the sensitizer is used for enhanced absorption and carrier injection of photoexcited charge carriers into the CNTs which serves as the transport medium.…”

Photosensitive and Flexible Organic Field‐Effect Transistors Based on Interface Trapping Effect and Their Application in 2D Imaging Array

“…OPTs are an attractive category of OFETs, which can be used as photodetectors, light‐induced switches, light‐triggered amplifiers, and image sensors, amongst other applications 15, 16, 17, 18, 19, 20, 21, 22, 23. In most studies on OPTs, it was the organic semiconductor itself, which exhibited photosensitivity.…”

Nonlocal Response in Infrared Detector with Semiconducting Carbon Nanotubes and Graphdiyne

“…In the last few decades, the purity of s‐SWNTs can reach 99.9% by several postseparation methods,8, 9, 10, 11, 12, 13 especially by conjugated polymer‐assisted selective dispersion. At the same time, p–n junctions, heterojunctions, and asymmetric electrodes have been employed to promote the dissociation of excitons 14, 15, 16, 17, 18, 19. For example, the performance of s‐SWNTs IR photodetector was improved by using fullerene (C 60 ) as an electron acceptor to dissociate excitons 14, 15, 16.…”

“…At the same time, p–n junctions, heterojunctions, and asymmetric electrodes have been employed to promote the dissociation of excitons 14, 15, 16, 17, 18, 19. For example, the performance of s‐SWNTs IR photodetector was improved by using fullerene (C 60 ) as an electron acceptor to dissociate excitons 14, 15, 16. In addition, the performance of the photodetector can also be enhanced with asymmetric electrodes, such as scandium (Sc) and palladium (Pd) showing n‐type and p‐type contact with SWNTs, respectively 17, 18.…”

“…In addition, the performance of the photodetector can also be enhanced with asymmetric electrodes, such as scandium (Sc) and palladium (Pd) showing n‐type and p‐type contact with SWNTs, respectively 17, 18. Though significant progress has been made in the dissociation of excitons, the composite materials will influence the electrical performance of the SWNTs film, for example the on‐state current and carrier mobility usually decrease 14, 15, 16, 17, 18, 19…”