Spectroscopic ellipsometry and x-ray diffraction are used to investigate the metal-insulator transition in V2O5 films. Below and above Tc no significant change in the (001) peak is observed, but both n and k spectra undergo remarkable changes over the entire photon energy range. The SE and XRD results indicate that the V2O5 film undergoes a MIT without a structural phase transition near 280 °C. Further the MIT is confirmed by measurement of the resistance with temperature.
The relationship between the first-order metal-insulator transition (MIT) and the structural phase transition (SPT) in VO2 film is analyzed by dielectric function, optical conductivity, plasma energy, and electrical conductivity. The MIT and SPT temperatures in VO2 films were approximately 68 and 75 °C, respectively, with an intermediate phase existing between 68 and 75 °C. The optical and electrical results indicate that the first-order MIT in VO2 films is not driven by the SPT
The temperature dependence of the interband transition in an α-V2O5 film was investigated using absorption and photoluminescence spectral measurements at a temperature range of 10–300 K. Transmission measurements in the experimental temperature range indicate that the α-V2O5 film has two distinct interband transitions, implying indirect and direct transitions. This result was confirmed by spectroscopic ellipsometry. The blue shift of both the transitions in the α-V2O5 film with decreasing temperature was explained by a reduction in the lattice-dilatation effect and the electron-phonon interaction. The PL measurements in the experimental temperature range showed that the emission near 530 nm is due to the indirect transition in the α-V2O5 film
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