Self-healing gelatin resistive random access memory (RRAM), namely, SHG RRAM, is utilized by incorporating the reversible imine bond as self-healing points into the gelatin. With the reformation of the dynamic imine bonds, the damaged SHG RRAM can repeatedly restore its memory properties after healing at 60 °C. Compared with the pristine SHG RRAM, the SHG RRAM after the healing process exhibits a higher ON/OFF ratio of over 10 5 . This interesting phenomenon could be attributed to the bending and heating process induced C−C sp 3 bonds, which consequently decrease the HRS current. In addition, the CAFM images can show that the filament paths occurred at the healed crack edge, leading to usefulness of the cracks in the formation of filament paths. These results repudiated the concept that cracks due to bending can reduce the performance of electronics. Moreover, the SHG RRAM after the healing process shows reproducible resistive switching, acceptable electrical uniformity, and stable retention characteristics. The self-healing gelatin material could provide a potential opportunity for the future development of biopolymers used in smart electronics applications.

Interface control of the filament types and the resistive switching behavior of apple pectin (AP) memory devices were systematically investigated using different sputtering plasmas. Supported by the temperature dependence of resistance and line-scan profiles, it can be observed that the sharp interface between the direct current (DC) Al and AP layer of the DC Al/AP/ITO structure showed semiconducting behavior. In the case of the radio frequency (RF) Al/AP/ITO structure, the transition from the metallic to semiconducting behavior occurred at 333 K. The transformation of filament types was a direct consequence of Al diffusion from the RF Al electrode. The diffused Al atoms from the RF Al electrode contributed to the creation of metallic filamentary channels. Moreover, the metal Al effectively diffused through RF sputtering, leading to the formation of an interfacial oxide layer between the Al electrode and the AP thin film. The role of the interfacial layer in enabling stable resistive switching and high device performance in the Al/AP/ITO resistive memory device was revealed. The AP memory device demonstrated a promising ON/OFF ratio of over 107 with uniform electrical distribution and stable retention. Understanding the underlying switching mechanisms of AP memory devices may pave the way toward smart bioelectronics.

Flexible gelatin resistive memory device exhibits a high ON/OFF ratio of over 106. Moreover, the bended gelatin resistive memory device can efficiently heal at room temperature without any external stimulus. This self-healing behavior of gelatin resistive memory device was demonstrated based on the metal chelating ligand. Al ions migrating from the top radio frequency Al electrode contributed to the construction of the metal chelating ligand. The carboxylates of gelatin can form multi-dentate coordination compounds with Al ions, which can restore the memory properties of the gelatin resistive memory device. Thus, Al ion migration from the top Al electrodes plays an important role in self-healing capability. The effect of Al ions on the self-healing mechanism was investigated by using secondary ion mass spectrometry, which is useful for the characterization of Al migration from the top electrode. This capability for restoring the electrical properties of gelatin memory device is desirable for flexible electronics and represents a major step toward self-healable bioelectronics.