2020
DOI: 10.1088/2058-8585/abcc51
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Repeatable room-temperature self-healing memory device based on gelatin films

Abstract: Flexible gelatin resistive memory device exhibits a high ON/OFF ratio of over 106. Moreover, the bended gelatin resistive memory device can efficiently heal at room temperature without any external stimulus. This self-healing behavior of gelatin resistive memory device was demonstrated based on the metal chelating ligand. Al ions migrating from the top radio frequency Al electrode contributed to the construction of the metal chelating ligand. The carboxylates of gelatin can form multi-dentate coordination comp… Show more

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Cited by 2 publications
(4 citation statements)
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“…As per the previous research we did, through the binding energy characterized by electron spectroscopy for chemical analysis (XPS), we learned that the atomic percentages of C, O, and N of the gelatin dielectric layer were 60, 22, and 18%, respectively. To identify the functional groups of the compound, Fourier-transform infrared spectroscopy reveals the absorption bands of the gelatin dielectric layer.…”
Section: Resultsmentioning
confidence: 59%
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“…As per the previous research we did, through the binding energy characterized by electron spectroscopy for chemical analysis (XPS), we learned that the atomic percentages of C, O, and N of the gelatin dielectric layer were 60, 22, and 18%, respectively. To identify the functional groups of the compound, Fourier-transform infrared spectroscopy reveals the absorption bands of the gelatin dielectric layer.…”
Section: Resultsmentioning
confidence: 59%
“…Hence, the BC material can be utilized in the present study as the substrate of the RRAM devices. By combining the successful results in the previous research about the gelatin dielectric film, , the integration of the gelatin and film could be ideal for achieving biodegradable and eco-friendly electronics.…”
Section: Introductionmentioning
confidence: 99%
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“…Despite the low work function (<4 eV) of Ti, the Al/C1/ITO structure exhibited a better ON/OFF ratio than the Ti/C1/ITO structure did. This result was attributed to the low HRS current due to the native AlO x layer [ 31 , 32 , 33 ]. The low-HRS current favored the high ON/OFF ratio.…”
Section: Resultsmentioning
confidence: 99%