We demonstrate a hybrid Si photodetector structure by employing an additional layer of fluorescent carbon quantum dot (CQDs) nanoparticles constructed on the surface of Si photodetector. The experimental studies reveal that the optimized hybrid device can efficiently enhance short-wavelength range responsibility between 300 nm to 600 nm without inducing any deteriorated photodetection performance beyond the short-wavelength region, and thereby achieve broadband sensitivity across UV-Vis-NIR spectra region. The measured photoresponsivity of the optimized device can achieve 0.088 A/W (@500 nm), which was 25% higher than that of a commerical blank PIN Si photodetector.

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