Enhancement of short-wavelength range responsibility for PIN silicon photodetectors using additional fluorescent carbon quantum dots nanoparticles

Abstract

We demonstrate a hybrid Si photodetector structure by employing an additional layer of fluorescent carbon quantum dot (CQDs) nanoparticles constructed on the surface of Si photodetector. The experimental studies reveal that the optimized hybrid device can efficiently enhance short-wavelength range responsibility between 300 nm to 600 nm without inducing any deteriorated photodetection performance beyond the short-wavelength region, and thereby achieve broadband sensitivity across UV-Vis-NIR spectra region. The measured photoresponsivity of the optimized device can achieve 0.088 A/W (@500 nm), which was 25% higher than that of a commerical blank PIN Si photodetector.

Optimized infrared light response speed <80 ms by applying an interface buffer layer to Schottky components

“…Signal conversion in photodetectors is typically achieved through photoelectric and photothermal effects. Photoelectric effect refers to the direct detection of light energy-absorbing electrons through the material's bandgap [1], internal photoemission mechanisms [2], or the hot carrier mechanisms [3]. On the other hand, the photothermal effect indirectly detects changes in refractive index or conductivity [4] in the material due to light energy absorption, resulting in a thermal change.…”

Improvement in near-infrared absorbance attenuation by using nanometer black silicon composited with gold nanoparticles

“…Silicon-based detectors have many advantages, such as a mature manufacturing process, low cost, and simple structure. Response bands of ordinary silicon-based detectors are mainly in the visible (VIS) band [ 1 ]. In order to enhance silicon-based materials absorption and realize the application of silicon-based materials in the NIR band, Mazur's team at Harvard University has successfully prepared new silicon-based materials with a surface micro–nano-trapped optical structure by using femtosecond laser irradiation of silicon-based material—black silicon [ 2 , 3 ], which achieves high absorption.…”