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By the virtue of the nature of the vapor-liquid-solid (VLS) growth process in semiconductor nanowires (NWs) and their small size, the nucleation, propagation, and termination of stacking defects in NWs are dramatically different from that in thin films. We demonstrate germanium-silicon axial NW heterostructure growth by the VLS method with 100% composition modulation and use these structures as a platform to understand how defects in stacking sequence force the ledge nucleation site to be moved along or pinned at a single point on the triple-phase circumference, which in turn determines the NW morphology. Combining structural analysis and atomistic simulation of the nucleation and propagation of stacking defects, we explain these observations based on preferred nucleation sites during NW growth. The stacking defects are found to provide a fingerprint of the layer-by-layer growth process and reveal how the 19.5° kinking in semiconductor NWs observed at high Si growth rates results from a stacking-induced twin boundary formation at the NW edge. This study provides basic foundations for an atomic level understanding of crystalline and defective ledge nucleation and propagation during [111] oriented NW growth and improves understanding for control of fault nucleation and kinking in NWs.

Bulk nanostructured metals can attribute both exceptional strength and poor thermal stability to high interfacial content, making it a challenge to utilize them in high-temperature environments. Here we report that a bulk two-phase bimetal nanocomposite synthesised via severe plastic deformation uniquely possesses simultaneous high-strength and high thermal stability. For a bimetal spacing of 10 nm, this composite achieves an order of magnitude increase in hardness of 4.13 GPa over its constituents and maintains it (4.07 GPa), even after annealing at 500°C for 1 h. It owes this extraordinary property to an atomically well-ordered bimaterial interface that results from twin-induced crystal reorientation, persists after extreme strains and prevails over the entire bulk. This discovery proves that interfaces can be designed within bulk nanostructured composites to radically outperform previously prepared bulk nanocrystalline materials, with respect to both mechanical and thermal stability.

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