Electrical effects of a single stacking fault on fully depleted thin-film silicon-on-insulator (SOI) metal–oxide–semiconductor field-effect transistors (MOSFETs) were characterized. A simple method was demonstrated for the fabrication of fully depleted thin-film SOI MOSFETs with a single stacking fault in their channel region. SOI islands were created using selective epitaxial growth/epitaxial lateral overgrowth technology. The influence of a single stacking fault on device I–V characteristics was determined and compared to that of nearby identical devices without stacking faults. Off-state leakage currents, a threshold voltage shift, and drive current lowering were observed for devices with a single stacking fault in their channel region. Based on the location of the single stacking fault relative to the device channel region, various physical models were proposed to explain the phenomena observed.

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