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We present a new technique to achieve uniform lateral electric field and maximum breakdown voltage in lateral double-diffused metal-oxide-semiconductor transistors fabricated on silicon-on-insulator substrates. A linearly increasing drift-region thickness from the source to the drain is employed to improve the electric field distribution in the devices. Compared to the lateral linear doping technique and the reduced surface field technique, twodimensional numerical simulations show that the new device exhibits reduced specific on-resistance, maximum off-and on-state breakdown voltages, superior quasi-saturation characteristics and improved safe operating area.

A novel trench field stop (FS) insulated gate bipolar transistor (IGBT) with a trench shorted anode (TSA) is proposed. By introducing a trench shorted anode, the TSA-FS-IGBT can obviously improve the breakdown voltage. As the simulation results show, the breakdown voltage is improved by a factor of 19.5% with a lower leakage current compared with the conventional FS-IGBT. The turn off time of the proposed structure is 50% lower than the conventional one with less than 9% voltage drop increased at a current density of 150 A/cm2. Additionally, there is no snapback observed. As a result, the TSA-FS-IGBT has a better trade-off relationship between the turn off loss and forward drop.