In this work, transparent, stable coplanar top-gate thin film transistors (TFTs) with an active layer of neodymium-doped indium oxide and zinc oxide (Nd-IZO) were successfully fabricated on a glass substrate by all sputtering processes. The devices with a post-annealing temperature of 400 °C exhibited good electrical performances with a saturation mobility (μsat) of 4.25 cm2·V−1·S−1, Ion/Ioff ratio about 106, Vth of −0.97 V and SS about 0.34 V/decade. Furthermore, the devices exhibited excellent negative and positive bias stability (NBS, PBS) of only a ΔVth shift of about −0.04 V and 0.05 V after 1 h, respectively. In addition, the devices showed high transparency about 96% over the visible-light region of 400–700 nm, which indicates a great potential in transparent displays.

Inkjet printing has been proved to be a powerful tool in the cost-effective ambient deposition of functional materials for the fabrication of electronic devices in the past decades. However, restricted by equipment and inks, the feature size of printed dots or lines with conventional inkjet printing is usually limited to several tens of micrometers, which could not fit the requirements for the fabrication of large-area, high-resolution microscale, even nanoscale, structures. Therefore, various technical means were developed for breaking the equipment limits. Here, we report a strategy for realizing ultrashort channels and homogeneous microstructures arrays by a conventional piezoelectric inkjet printing technique without any additional pre-mask process on the substrate. This strategy extends application of piezoelectric inkjet printing technique to biological and technological areas.