DSA lithography is a chemical assisted patterning approach, which has attracted a great deal of interest due to its potential high resolution and low cost. Researchers around the world discovered some sub-5 nm high resolution DSA materials, and all these materials required high annealing temperature or long annealing time. In this study, we design and synthesize some PS-typed and PMMA-typed fluoro-containing BCPs. The finest half pitch of these BCPs is less than 5 nm. And the thermal annealing time of PS-typed BCPs is optimized to 1 min, which has been the highest assembly speed for sub-5 nm nanopatterning. The self-assembly speed of PMMA-typed BCPs is much slower than the PS-typed. We further exhibit that ordered nanopatterns are assembled to appear straight 10 nm lines in the silicon template.

Directed self-assembly (DSA) of block copolymer (BCP) is a potential patterning technology for sub-7 nm lithography. Series of styryl-polyhedral oligomeric silsesquioxanes(POSS)-containing BCPs, poly(N-propyl-4-vinylbenzamide isobutyl POSS)-block-poly(heptafluorobutyl methacrylate) (PStNPOSS-b-PHFBMA) and poly(styrene-co-N-propyl-4-vinylbenzamide isobutyl...

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