A nonlithographic second-order self-assembly process for synthesizing uniform and ordered arrays of nanorods and nanodots is presented and applied to the fabrication of ZnO nanorod arrays. Nucleation sites were defined by patterning Au nanodot catalysts with a self-organized array of nanopores formed in anodized aluminum oxide (AAO). The self-assembled vertically aligned ZnO nanorods grown on GaN exhibit hexagonal facets, and have a uniform diameter of 60 nm and a mean length of 400 nm. The growth technique is simple, robust, and offers a direct control over array and single nanorod configurations. The growth temperature is significantly lower than normal, and yet, the resultant defect level is much lower than normal.

A nonlithographic technique that utilizes highly ordered anodized aluminum oxide porous membrane as template is presented as a general fabrication means for the formation of an array of vastly different two-dimensional lateral superlattices structures. Hexagonal close-packed nanopore arrays were fabricated on Si, GaAs, and GaN substrates via reactive ion etching. Quantum dot arrays of various metals and semiconductors were formed through evaporation and subsequent etching. The two-dimensional lateral superlattice structures fabricated using this method are of a high level of ordering, uniformity, and packing density. The diameter and periodicity of the nanostructures are determined by the features of the original alumina membrane, which can be adjusted by varying the anodization conditions.

Nb films containing extended arrays of holes with 45-nm diameter and 100-nm spacing have been fabricated using anodized aluminum oxide (AAO) as substrate. Pronounced matching effects in the magnetization and Little-Parks oscillations of the superconducting critical temperature have been observed in fields up to 9 kOe. Flux pinning in the patterned samples is enhanced by two orders of magnitude as compared to unpatterned reference samples in applied fields exceeding 5 kOe. Matching effects are a dominant contribution to vortex pinning at temperatures as low as 4.2 K due to the extremely small spacing of the holes.