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High‐performance, transparent, and flexible thin‐film transistors (TFTs) with polycrystalline channels in a bottom‐gate structure are successfully fabricated at extremely low temperatures of 80, 90, and 100 °C by atomic layer deposition (ALD) in which ZnO and Al2O3 are used as channels and dielectric layers, respectively. The transistors are superior to silicon‐based TFTs in which high temperatures are necessarily involved in both preparation and postgrowth annealing. Among all devices, TFTs grown at 100 °C exhibit the best performance which can be attributed to the lowest grain boundary trap density. Additionally, the TFTs are successfully transferred to plastic substrates without any performance degradation, which shows a high mobility of 37.1 cm2V−1 s−1, a high on/off‐state current ratio of 107 at VDS = 0.1 V, a small subthreshold swing of 0.38 V dec−1, and a proper threshold voltage of 1.34 V as well as an excellent bias stability.

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Flexible and transparent capacitors have been fabricated on polyethylene naphthalate (PEN) substrates. The Cr–Au nanomeshes, ZrO2, and aluminum-doped zinc oxide (AZO) films were prepared in sequence as bottom electrodes, dielectric layers and top electrodes. A high quality factor of 82 was obtained, nearly 4.9 times larger than that ever reported, which directly indicates much lower power consumption. The flexible capacitors can normally work at a bending radius of 7 mm without any loss of electrical performance, and even maintain electrical characteristics after cyclical bending tests. Moreover, a high capacitance density of 12.3 fF μm−2 and an ultralow leakage current of 1.5 × 10−8 A cm−2 at 1 V have been achieved. Transmittance measurements indicate that the capacitors represent an average optical transmittance of over 50% at a visible region. This is, therefore, a dramatic step toward real applications in flexible and transparent integrated circuits.