Due to a rapid increase in the amount of data, there is a huge demand for the development of new memory technologies as well as emerging computing systems for high-density memory storage and efficient computing. As the conventional transistor-based storage devices and computing systems are approaching their scaling and technical limits, extensive research on emerging technologies is becoming more and more important. Among other emerging technologies, CBRAM offers excellent opportunities for future memory and neuromorphic computing applications. The principles of the CBRAM are explored in depth in this review, including the materials and issues associated with various materials, as well as the basic switching mechanisms. Furthermore, the opportunities that CBRAMs provide for memory and brain-inspired neuromorphic computing applications, as well as the challenges that CBRAMs confront in those applications, are thoroughly discussed. The emulation of biological synapses and neurons using CBRAM devices fabricated with various switching materials and device engineering and material innovation approaches are examined in depth.

Growth of data eases the way to access the world but consumes increasing energy to store and process. Neuromorphic electronics emerged in the last decade, inspired by biological neuron and...

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A double stacked monochalcogenide GeS-based conducting-bridge random access memory (CBRAM) device with a IGZO buffer layer is investigated for highly improved resistive memory characteristics. The IGZO/GeS double layer is found to provide the CBRAM with a markedly improved sub-1V DC set/reset-voltage distributions (<±0.1 V variation). High endurance (>107 cycles) and retention (>105 s at 85 °C) performance are also achieved. The metal ion diffusion and migration rates in the solid electrolytes along with the redox reaction rates at the electrodes determine the respective resistive switching (RS) mechanism in the CBRAM device. Considering this fact, it is proposed that Ag diffusion into IGZO creates a virtual electrode, when coupled with strong ionic transport in GeS, consistently mediate the formation/dissolution of Ag filament there, thus reducing switching variation. Understanding the RS mechanism based on the materials' physical and chemical properties and tailoring the device structure allow an optimal control over cycle to cycle and device to device variability. The findings show that this material combination or similar oxide/chalcogenide stacks may offer a facile means for mitigating CBRAM variability.