N-(5-Chloro-2,4-dihydroxyphenyl)-1-phenylcyclobutanecarboxamide (N-CDPCB, 1a) is found to be an inhibitor of the fat mass and obesity associated protein (FTO). The crystal structure of human FTO with 1a reveals a novel binding site for the FTO inhibitor and defines the molecular basis for recognition by FTO of the inhibitor. The identification of the new binding site offers new opportunities for further development of selective and potent inhibitors of FTO, which is expected to provide information concerning novel therapeutic targets for treatment of obesity or obesity-associated diseases.

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BackgroundSchool bullying is an emerging problem in China. The present study aimed to measure the prevalence of bullying behaviors among Chinese adolescents and to examine the association of bullying and being bullied with family factors, school factors and indicators of psychosocial adjustment.MethodsA cross-sectional study was conducted. A total of 8,342 middle school students were surveyed in four cities in the Guangdong Province. Self-reports on bullying involvement and information regarding family factors, school factors and psychosocial adjustment were collected. Descriptive statistics and multi-level logistic regression analysis were used to evaluate the prevalence of school bullying and explore potentially influential factors.ResultsOf the total sample, 20.83% (1,738) reported being involved in bullying behaviors. Of the respondents, 18.99% were victims of bullying, 8.60% were bullies and 6.74% both bullied themselves and bullied others. Factors that were determined to be correlated with bullying behaviors included grade, parental caring, consideration of suicide, running away from home, time spent online per day and being in a physical fight.ConclusionBullying was determined to be prevalent among Chinese adolescents. Given the concurrent psychosocial adjustment, family and school factors associated with bullying, as well as the potential long-term negative outcomes for these youth, this issue merits serious attention, both for future research and preventive intervention.

Atomically thin two-dimensional (2D) bismuth oxychalcogenides (Bi 2 O 2 X, X = S, Se, Te) have recently attracted extensive attention in the material research community due to their unique structure, outstanding long-term ambient stability, and high carrier mobility, which enable them as promising candidates for high-performance electronic and optoelectronic applications. Herein, we present a comprehensive review on the recent advances of 2D bismuth oxychalcogenides research. We start with an introduction of their fundamental properties including crystal structure and electronic band structure. Next, we summarize the common techniques for synthesizing these 2D structures with high crystallinity and large lateral size. Furthermore, we elaborate on their device applications including transistors, artificial synapses, optical switch and photodetectors. The last but not the least, we summarize the existing challenges and prospects for this emerging 2D bismuth oxychalcogenides field.