In this work, high-quality 1D van der Waals (vdW) Nb 2 Pd 3 Se 8 is synthesized, showing an excellent scalability from bulk to single-ribbon due to weakly bonded repeating unit ribbons. The calculation of electronic band structures confirmed that this novel Nb 2 Pd 3 Se 8 is a semiconducting material, displaying indirect-to-direct bandgap transition with decreasing the number of unit-ribbons from bulk to single. Field effect transistors (FETs) fabricated on the mechanically exfoliated Nb 2 Pd 3 Se 8 nanowires exhibit n-type transport characteristics at room temperature, resulting in the values for the electron mobility and I on /I off ratio of 31 cm 2 V −1 s −1 and ≈10 4 , respectively. Through transport measurements at various temperatures from room temperature down to 90 K, it is confirmed that Nb 2 Pd 3 Se 8 FETs can achieve negligible Schottky barrier height (SBH) for the Au contacts at the temperature range, displaying clear ohmic contact characteristics. Furthermore, top-gated FETs fabricated with the Al 2 O 3 dielectric layer are studied simultaneously with back-gated FETs.

In this study, high‐purity and centimeter‐scale bulk Ta2Ni3Se8 crystals are obtained by controlling the growth temperature and stoichiometric ratio between tantalum, nickel, and selenium. It is demonstrated that the bulk Ta2Ni3Se8 crystals could be effectively exfoliated into a few chain‐scale nanowires through simple mechanical exfoliation and liquid‐phase exfoliation. Also, the calculation of electronic band structures confirms that Ta2Ni3Se8 is a semiconducting material with a small bandgap. A field‐effect transistor is successfully fabricated on the mechanically exfoliated Ta2Ni3Se8 nanowires. Transport measurements at room temperature reveal that Ta2Ni3Se8 nanowires exhibit ambipolar semiconducting behavior with maximum mobilities of 20.3 and 3.52 cm2 V−1 s−1 for electrons and holes, respectively. The temperature‐dependent transport measurement (from 90 to 295 K) confirms the carrier transport mechanism of Ta2Ni3Se8 nanowires. Based on these characteristics, the obtained 1D vdW material is expected to be a potential candidate for additional 1D materials as channel materials.

Low-temperature-processed semiconductors are an emerging need for next-generation scalable electronics, and these semiconductors need to feature large-area fabrication, solution processability, high electrical performance, and wide spectral optical absorption properties. Although various strategies of low-temperature-processed n-type semiconductors have been achieved, the development of high-performance p-type semiconductors at low temperature is still limited. Here, we report a unique low-temperature-processed method to synthesize tellurium nanowire networks (Te-nanonets) over a scalable area for the fabrication of high-performance large-area p-type field-effect transistors (FETs) with uniform and stable electrical and optical properties. Maximum mobility of 4.7 cm2/Vs, an on/off current ratio of 1 × 104, and a maximum transconductance of 2.18 µS are achieved. To further demonstrate the applicability of the proposed semiconductor, the electrical performance of a Te-nanonet-based transistor array of 42 devices is also measured, revealing stable and uniform results. Finally, to broaden the applicability of p-type Te-nanonet-based FETs, optical measurements are demonstrated over a wide spectral range, revealing an exceptionally uniform optical performance.

Due to their unique properties and potential applications, van der Waals (vdW) crystals with covalently bonded building blocks through vdW interactions have sparked widespread interest. In this article, we introduce a Ta2Ni3Se8 material as an example of an emerging one-dimensional (1D)-vdW-based material. Recently, it was demonstrated that bulk Ta2Ni3Se8 crystals may be effectively exfoliated into a few-chain-scale nanowires using simple mechanical and liquid-phase exfoliation. We performed density-functional theory calculations to get a better understanding of its electrical, magnetic, and transport properties. Theoretically, we expect that this Ta2Ni3Se8 is a semiconducting material, displaying the indirect-to-direct bandgap transition from bulk to single, as well as the band splitting and bandgap opening with the inclusion of Coulomb interaction. Based on deformation potential theory, the carrier mobility of bulk Ta2Ni3Se8 along the axis direction (a-axis) is as high as 264.00 cm2 V−1 s−1 for electrons and 119.62 cm2 V−1 s−1 for holes. The calculated carrier mobility of Ta2Ni3Se8, a 1D single nanowire, is 59.60 cm2 V−1 s−1 for electrons and 42.90 cm2 V−1 s−1 for holes, which is comparable to that of other 1D materials. This confirms that a recently developed field-effect transistor based on Ta2Ni3Se8 nanowires exhibits maximum experimental mobilities of 20.3 and 3.52 cm2 V−1 s−1 for electrons and holes, respectively. On the basis of the obtained intriguing properties of 1D vdW Ta2Ni3Se8 material, it is expected to be a potential candidate for additional 1D materials as channel materials.

Recently, ternary transition metal chalcogenide Ta2X3Se8 (X = Pd or Pt) has attracted great interest as a class of emerging one-dimensional (1D) van der Waals (vdW) materials. In particular,Ta2Pd3Se8 has...