Solution-processed MXene–perovskite image sensor arrays are realized by a top-down method, which combine desirable manufacturing advantages and state-of-the-art performance metrics.

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An ultrathin near-perfect MoSe 2 absorber working in the visible regime is demonstrated theoretically and experimentally, and it consists of a MoSe 2 /Au bi-layer film. The polymerassisted deposition method is used to synthesize MoSe 2 films, which can reduce the roughness and thus improve the film absorption. Simulation results show that the absorption of the absorber with 22 nm MoSe 2 reaches to larger than 90% between 628.5 nm and 718 nm with a peak value up to 99.5% at 686 nm. Moreover, the measured absorption also shows near-perfect absorption of this simple absorber. Finally, an ultrathin photodetector is fabricated based on this perfect absorber and shows on/off reproducibility and remarkable photocurrent, which is three orders of magnitude higher than the dark current.

The recently demonstrated Cs3Bi2I9 single crystals (SCs) exhibit superior performance for X‐ray detection. More importantly, they do not contain any toxic lead element. However, compared with lead‐halide perovskites, one challenge for the Cs3Bi2I9 SC for X‐ray detection application is that it is difficult to prepare large‐sized and high‐quality SCs. Here, a liquid diffused separation induced crystallization (LDSC) method is employed to grow Cs3Bi2I9 SCs for eliminating the temperature fluctuation and convection currents caused by the thermal gradient in the growth solution. The resultant Cs3Bi2I9 SC exhibits a microstrain of 1.21 × 10–3, a resistivity of 1.12 × 109 Ω cm, a carrier mobility of 4.57 cm2 V–1 s–1, and a mobility‐lifetime product of 1.87 × 10–3 cm2 V–1. As a result, an X‐ray detector based on the high‐quality Cs3Bi2I9 SC exhibits an excellent dose rate linearity, a sensitivity of 964 µC Gyair–1 cm–2, and a limit of detection (LoD) of 44.6 nGyair s–1.