Antiferroelectric materials are attractive for energy storage applications and are becoming increasingly important for power electronics. Lead-free silver niobate (AgNbO3) and sodium niobate (NaNbO3) antiferroelectric ceramics have reviced intensive interests...
BiFeO3-BaTiO3 is a promising high-temperature
piezoelectric ceramic that possesses both good electromechanical properties
and a Curie temperature (T
C). Here, the
piezoelectric charge constants (d
33) and
strain coefficients (d*33) of (1 – x)BiFeO3-xBaTiO3 (BF-xBT; 0.20 ≤ x ≤ 0.50) lead-free
piezoelectrics were investigated at room temperature. The results
showed a maximum d
33 of 225 pC/N in the
BF-0.30BT ceramic and a maximum d*33 of
405 pm/V in the BF-0.35BT ceramic, with T
Cs of 503 and 415 °C, respectively. To better understand the
performance enhancement mechanisms, a phase diagram was established
using the results of XRD, piezoresponse force microscopy, TEM, and
electrical property measurements. The superb d
33 of the BF-0.30BT ceramic arose because of its location in
the optimum point in the morphotropic phase boundary, low oxygen vacancy
(V
O
··) concentration, and domain heterogeneity. The
superior d*33 of the BF-0.35BT ceramic
was attributed to a weak relaxor behavior between coexisting macrodomains
and polar nanoregions. The presented strategy provides guidelines
for designing high-temperature BF-BT ceramics for different applications.
BiFeO3-BaTiO3 is a promising high-temperature lead-free piezo-ceramics due to its high Curie temperature (TC > 500 °C) and excellent piezoelectric properties. However, a high leakage current was often detected in this system, which severely affects its applications. In this work, the 0.7BiFe(1−x)GaxO3-0.3BaTiO3 (BFGax-BT, 0.00 ≤ x ≤ 0.10) system was designed to reveal the reason of leakage-current density decreased by their leakage mechanism. Because of the suppression of generation of Fe2+ and oxygen vacancy (VO∙∙), the leakage mechanism from space charge limited conduction mechanism found in Ga-free BF-BT ceramics turns into Ohmic conduction and Schottky emission mechanism as Fe3+ was replaced with Ga3+. A good combination of piezoelectric properties (d33 = 174 pC N−1 and kp = 29%) and high Curie temperature (TC = 497 °C) was achieved in the BFGa0.06-BT ceramic owning the lowest leakage-current density. This work will provide the clues for preparing the high insulation and high piezoelectric performance BF-BT-based ceramics by suppressing the valence change of Fe3+ and VO∙∙ appearance.
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