In this article, we present the comparison of material quality and device performance of gas-source molecular beam epitaxy (GSMBE)- and metal-organic molecular beam epitaxy (MOMBE)-grown C-doped InGaAs and npn InGaAs/InP heterojunction bipolar transistors (HBTs). The results indicate that the crystal quality of GSMBE-grown samples is comparable to that of MOMBE-grown samples. The GSMBE-grown HBTs show excellent dc and high frequency performance. The dc current gain (β) was 37 at a collector current of 21 mA and the emitter-base and base-collector junction ideality factors were 1.14 and 1.04 indicating good junction properties. For high frequency performance, the fT and fmax are around 108 and 128 GHz for a 4000 Å InGaAs collector with an emitter area of 3×10 μm2. Finally, the thermal stability of C-doped InGaAs and its effects on InP/InGaAs HBT device reliability will be discussed.

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The noise parameters of Npn InGaPIGaAs HBT devices are reported for an array of bias conditions from 2-18 GHz. A minimum noise figure of 0.8 dB with associated gain of 16 dB at 2 GHz was achieved at a collector bias of 0.83mA and a collector-emitter voltage of 2V. This was achieved by a device with emitter area of 3xlOp.111~. A model is also presented that is used to compare measured and theoretical results The low power consumption, high associated gain, low equivalent noise resistance, and variable optimum noise match coupled with an excellent degree of linearity [I] makes the InGaP/GaAs HBT an ideal candidate for low noise amplifters (2-6GHz) with minimal power consumption.Introduction: Portable, battery operated circuit applications require devices that provide minimum noise figure and maximum linearity with minimal power consumption. In particular, CDMA and PCM CIA communication applications call for these components to be designed for 2.4 and 5.8 GHz. By