Since the discovery of Weyl semimetals (WSMs) 1,2 , there have been significant efforts to pursue ideal WSMs with all the Weyl nodes being symmetry related and not interfered with by any other bands. Although ideal WSM states have been realized in bosonic systems (i.e., photonic crystals 3 ), ideal fermionic WSMs are still lacking. In this Letter, we report transport evidence for a magnetic-field-induced ideal type-II Weyl state in the intrinsic antiferromagnetic topological insulator Mn(Bi,Sb)2Te4 4,5 . At an optimal sample composition, we minimize the carrier density, thus lowering the chemical potential and realizing the

Infrared laser systems are vital for applications in spectroscopy, communications, and biomedical devices, where infrared nonlinear optical (NLO) crystals are required for broadband frequency down‐conversion. Such crystals need to have high non‐resonant NLO coefficients, a large bandgap, low absorption coefficient, and phase‐matchability among other competing demands; for example, a larger bandgap leads to smaller NLO coefficients. Here, the successful growth of single crystals of γ ‐NaAsSe2 that exhibit a giant second harmonic generation (SHG) susceptibility of d11 = 590 pm V−1 at 2 µm wavelength is reported; this is ~18 times larger than that of commercial AgGaSe2 while retaining a similar bandgap of ~1.87 eV, making it an outstanding candidate for quasi‐phase‐matched devices utilizing d11. In addition, γ ‐NaAsSe2 is both Type I and Type II phase‐matchable, and has a transparency range up to 16 µm wavelength. Thus, γ ‐NaAsSe2 is a promising bulk NLO crystal for infrared laser applications.

High-power infrared laser systems with broadband tunability are of great importance due to their wide range of applications in spectroscopy and free-space communications. These systems require nonlinear optical (NLO) crystals for wavelength up/down conversion using sum/difference frequency generation, respectively. NLO crystals need to satisfy many competing criteria, including large nonlinear optical susceptibility, large laser induced damage threshold (LIDT), wide transparency range and phase-matchability. Here, we report bulk single crystals of SnP2S6 with a large non-resonant SHG coefficient of d33 = 53 pm V −1 at 1550nm and a large LIDT of 350 GW cm -2 for femtosecond laser pulses. It also exhibits a broad transparency range from 0.54μm to 8.5μm (bandgap of ~2.3 eV) and can be both Type I and Type II phase-matched. The complete linear and SHG tensors are measured as well as predicted by first principles calculations, and they are in excellent agreement. A proximate double-resonance condition in the electronic band structure for both the fundamental and the SHG light is shown to enhance the non-resonant SHG response. Therefore, SnP2S6 is an outstanding candidate for infrared laser applications.

Electric-dipole optical second harmonic generation (SHG) is a second-order nonlinear process that is widely used as a sensitive probe to detect broken inversion symmetry and local polar order. Analytical modeling of the SHG polarimetry of a nonlinear optical material is essential to extract its point group symmetry and the absolute nonlinear susceptibilities. Current literature on SHG analysis involves numerous approximations and a wide range of (in)accuracies. We have developed an open-source package called the Second Harmonic Analysis of Anisotropic Rotational Polarimetry (♯SHAARP.si) which derives analytical and numerical solutions of reflection SHG polarimetry from a single interface (.si) for bulk homogeneous crystals with arbitrary symmetry group, arbitrary crystal orientation, complex and anisotropic linear dielectric tensor with frequency dispersion, a general SHG tensor and arbitrary light polarization. ♯SHAARP.si enables accurate modeling of polarimetry measurements in reflection geometry from highly absorbing crystals or wedge-shaped transparent crystals. The package is extendable to multiple interfaces.

The isostructural heteroanionic compounds β-LiAsS2–x Se x (x = 0, 0.25, 1, 1.75, 2) show a positive correlation between selenium content and second-harmonic response and greatly outperform the industry standard AgGaSe2. These materials crystallize in the noncentrosymmetric space group Cc as one-dimensional 1/∞ [AsQ2]− (Q = S, Se, S/Se) chains consisting of corner-sharing AsQ3 trigonal pyramids with charge-balancing Li+ atoms interspersed between the chains. LiAsS2–x Se x melts congruently for 0 ≤ x ≤ 1.75, but when the Se content exceeds x = 1.75, crystallization is complicated by a phase transition. This behavior is attributed to the β- to α-phase transition present in LiAsSe2, which is observed in the Se-rich compositions. The band gap decreases with increasing Se content, starting at 1.63 eV (LiAsS2) and reaching 1.06 eV (β-LiAsSe2). Second-harmonic generation measurements as a function of wavelength on powder samples of β-LiAsS2–x Se x show that these materials exhibit significantly higher nonlinearity than AgGaSe2 (d 36 = 33 pm/V), reaching a maximum of 61.2 pm/V for LiAsS2. In comparison, single-crystal measurements for LiAsSSe yielded a d eff = 410 pm/V. LiAsSSe, LiAsS0.25Se1.75, and β-LiAsSe2 show phase-matching behavior for incident wavelengths exceeding 3 μm. The laser-induced damage thresholds from two-photon absorption processes are on the same order of magnitude as AgGaSe2, with S-rich materials slightly outperforming AgGaSe2 and Se-rich materials slightly underperforming AgGaSe2.