3D core–shell nanostructures of few-layer NiFe LDH nanosheets grown on Cu nanowires are fabricated toward highly efficient overall water splitting.

Water electrolysis is an advanced energy conversion technology to produce hydrogen as a clean and sustainable chemical fuel, which potentially stores the abundant but intermittent renewable energy sources scalably. Since the overall water splitting is an uphill reaction in low efficiency, innovative breakthroughs are desirable to greatly improve the efficiency by rationally designing non-precious metal-based robust bifunctional catalysts for promoting both the cathodic hydrogen evolution and anodic oxygen evolution reactions. We report a hybrid catalyst constructed by iron and dinickel phosphides on nickel foams that drives both the hydrogen and oxygen evolution reactions well in base, and thus substantially expedites overall water splitting at 10 mA cm−2 with 1.42 V, which outperforms the integrated iridium (IV) oxide and platinum couple (1.57 V), and are among the best activities currently. Especially, it delivers 500 mA cm−2 at 1.72 V without decay even after the durability test for 40 h, providing great potential for large-scale applications.

Conventional theory predicts that ultrahigh lattice thermal conductivity can only occur in crystals composed of strongly bonded light elements, and that it is limited by anharmonic three-phonon processes. We report experimental evidence that departs from these long-held criteria. We measured a local room-temperature thermal conductivity exceeding 1000 watts per meter-kelvin and an average bulk value reaching 900 watts per meter-kelvin in bulk boron arsenide (BAs) crystals, where boron and arsenic are light and heavy elements, respectively. The high values are consistent with a proposal for phonon-band engineering and can only be explained by higher-order phonon processes. These findings yield insight into the physics of heat conduction in solids and show BAs to be the only known semiconductor with ultrahigh thermal conductivity.

We prepared iodine-doped n-type SnSe polycrystalline by melting and hot pressing. The prepared material is anisotropic with a peak ZT of ~0.8 at about 773 K measured along the hot pressing direction. This is the first report on TE properties of n-type Sn chalcogenide alloys.With increasing content of iodine, the carrier concentration changed from 2.3×10 17 cm -3 (p-type)to 5.0×10 15 cm -3 (n-type) then to 2.0×10 17 cm -3 (n-type). The decent ZT is mainly attributed to the intrinsically low thermal conductivity due to the high anharmonicity of the chemical bonds like those in p-type SnSe. By alloying with 10 atm. % SnS, even lower thermal conductivity and an enhanced Seebeck coefficient were achieved, leading to an increased ZT of ~1.0 at about 773 K measured also along the hot pressing direction.